CZT5551A - Даташиты. Аналоги. Основные параметры

CZT5551 NPN Transistor Epitaxial Planar Transistor SOT-223 Description The CZT5551 is designed for general purpose applications requiring high breakdown voltages. REF. REF. Min. Max. Min. Max. A 6.70 7.30 B 13 TYP. C 2.90 3.10 J 2.30 REF. D 0.02 0.10 1 6.30 6.70 E 0 10 2 6.30 6.70 I 0.60 0.80 3 3.30 3.70 H 0.25 0.35 4 3.30 3.70 o 5 1.40 1.80 MAXIMUM RATINGS* (Tam

CZT5551E www.centralsemi.com ENHANCED SPECIFICATION SURFACE MOUNT DESCRIPTION NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CZT5551E is an NPN Silicon Transistor, packaged in an SOT-223 case, designed for general purpose amplifier applications requiring high breakdown voltage. MARKING FULL PART NUMBER FEATURES SOT-223 CASE SOT-223 CASE High Collector Breakdown Voltage

CZT5551 www.centralsemi.com SURFACE MOUNT DESCRIPTION NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CZT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications. MARKING FULL PART NUMBER SOT-223 CASE SOT-223 CASE MAXIMUM RATINGS (TA=25 C) SYMBOL UNITS Col

CZT5551HC www.centralsemi.com SURFACE MOUNT HIGH CURRENT DESCRIPTION NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CZT5551HC type is a high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications. MARKING FULL PART NUMBER SOT-223 CASE SOT-223 CASE

CZT5551 NPN Transistor Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product SOT-223 Description The CZT5551 is designed for general purpose applications requiring high breakdown voltages. REF. REF. Min. Max. Min. Max. A 6.70 7.30 B 13 TYP. C 2.90 3.10 J 2.30 REF. 5 5 5 1 D 0.02 0.10 1 6.30 6.70 Date Code E 0 10 2 6.30 6.70 I 0.60 0.80 3 3.3

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors SOT-223 CZT5551 TRANSISTOR (NPN) FEATURES High Voltage 1. BASE High Voltage Amplifier Application 2. COLLECTOR MARKING 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 180 V CBO V Collector-Emitter Volt

SMD Type Transistors NPN Transistors CZT5551 (KZT5551) Unit mm SOT-223 6.50 0.2 3.00 0.1 4 Features High Voltage High Voltage Amplifier Application 1 2 3 0.250 2.30 (typ) Gauge Plane 1.Base 2.Collector 0.70 0.1 3.Emitter 4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Colle