MJD127D . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJD127D
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 4 MHz
Capacitancia de salida (Cc): 300 pF
Ganancia de corriente contínua (hfe): 1000
Paquete / Cubierta: TO252
Búsqueda de reemplazo de transistor bipolar MJD127D
MJD127D Datasheet (PDF)
mjd127d.pdf
MJD127DSilicon PNP Darlington Power TransistorDESCRIPTIONLow Collector-Emitter saturation voltageLead formed for surface mount applicationsHigh DC current gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applications.ABSOLUTE MAXI
mjd122re mjd127.pdf
Order this documentMOTOROLAby MJD122/DSEMICONDUCTOR TECHNICAL DATANPN*MJD122Complementary DarlingtonPNPMJD127*Power TransistorsDPAK For Surface Mount Applications*Motorola Preferred DeviceDesigned for general purpose amplifier and low speed switching applications.SILICON Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)POWER TRANSISTORS
mjd122 mjd127.pdf
MJD122MJD127COMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLELCOLLECTOR- EMITTER DIODE SURFACE-MOUNTING TO-252 (DPAK)POWER PACKAGE IN TAPE & REEL(SUFFIX T4)3 ELECTRICAL SIMILAR TO TIP122 ANDTIP1271APPLICATIONS GENERAL PURPOSE SWITCHING ANDDPAKAMPLIFIER.TO-252(Suffix
mjd127g.pdf
MJD122,NJVMJD122T4G (NPN), MJD127 (PNP)Complementary DarlingtonPower Transistorhttp://onsemi.comDPAK For Surface Mount ApplicationsSILICONDesigned for general purpose amplifier and low speed switchingPOWER TRANSISTORapplications.8 AMPERES100 VOLTS, 20 WATTSFeatures Lead Formed for Surface Mount Applications in Plastic Sleeves Surface Mount Replacements for 2N
mjd127t4g.pdf
MJD122,NJVMJD122T4G (NPN), MJD127 (PNP)Complementary DarlingtonPower Transistorhttp://onsemi.comDPAK For Surface Mount ApplicationsSILICONDesigned for general purpose amplifier and low speed switchingPOWER TRANSISTORapplications.8 AMPERES100 VOLTS, 20 WATTSFeatures Lead Formed for Surface Mount Applications in Plastic Sleeves Surface Mount Replacements for 2N
njvmjd122 njvmjd127.pdf
MJD122, NJVMJD122(NPN), MJD127,NJVMJD127 (PNP)Complementary DarlingtonPower Transistorhttp://onsemi.comDPAK For Surface Mount ApplicationsSILICONDesigned for general purpose amplifier and low speed switchingPOWER TRANSISTORapplications.8 AMPERES100 VOLTS, 20 WATTSFeatures Lead Formed for Surface Mount Applications in Plastic Sleeves Surface Mount Replacements
mjd127.pdf
MJD127(NPN)TO-251/TO-252-2L TransistorTO-2511. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features High DC current gain Electrically similar to popular TIP127 Built-in a damper diode at E-C TO-252-2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -100 VVCEO Collector-Emitter Voltage -100 VVEBO Emitter-B
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP31C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
