MJD127D Todos los transistores

 

MJD127D Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJD127D

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 20 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 4 MHz

Capacitancia de salida (Cc): 300 pF

Ganancia de corriente contínua (hFE): 1000

Encapsulados: TO252

 Búsqueda de reemplazo de MJD127D

- Selecciónⓘ de transistores por parámetros

 

MJD127D datasheet

 ..1. Size:977K  slkor
mjd127d.pdf pdf_icon

MJD127D

MJD127D Silicon PNP Darlington Power Transistor DESCRIPTION Low Collector-Emitter saturation voltage Lead formed for surface mount applications High DC current gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXI

 8.1. Size:284K  motorola
mjd122re mjd127.pdf pdf_icon

MJD127D

Order this document MOTOROLA by MJD122/D SEMICONDUCTOR TECHNICAL DATA NPN * MJD122 Complementary Darlington PNP MJD127* Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. SILICON Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) POWER TRANSISTORS

 8.2. Size:93K  st
mjd122 mjd127.pdf pdf_icon

MJD127D

MJD122 MJD127 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX T4 ) 3 ELECTRICAL SIMILAR TO TIP122 AND TIP127 1 APPLICATIONS GENERAL PURPOSE SWITCHING AND DPAK AMPLIFIER. TO-252 (Suffix

 8.3. Size:205K  onsemi
mjd127g.pdf pdf_icon

MJD127D

MJD122, NJVMJD122T4G (NPN), MJD127 (PNP) Complementary Darlington Power Transistor http //onsemi.com DPAK For Surface Mount Applications SILICON Designed for general purpose amplifier and low speed switching POWER TRANSISTOR applications. 8 AMPERES 100 VOLTS, 20 WATTS Features Lead Formed for Surface Mount Applications in Plastic Sleeves Surface Mount Replacements for 2N

Otros transistores... BFG520-X , BFG520-XR , CZT5551A , CZT5551C , CZT5551N , D882Q , MBT3946 , MJD122D , NJW0281G , MMBTA56G , MMBTA56H , PBSS304 , S8050TH , S8050TJ , S8050TL , S8050W-H , S8050W-J .

History: 849AT

 

 

 


History: 849AT

🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550

 

 

 

Popular searches

tip122 transistor equivalent | irfz44n equivalent | 2n2923 | 2n2102 | mj15003g | oc75 transistor | irfp260m | 2sc1213

 

 

↑ Back to Top
.