2SA1141R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1141R
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100 W
Tensión colector-base (Vcb): 115 V
Tensión colector-emisor (Vce): 115 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 90(typ) MHz
Capacitancia de salida (Cc): 390 pF
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: TO3PN
Búsqueda de reemplazo de transistor bipolar 2SA1141R
2SA1141R Datasheet (PDF)
2sa1141r 2sa1141q.pdf
SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1141DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -115V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2681APPLICATIONSAudio frequency power amplifierHigh frequency power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -115 VCBO
2sa1141.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1141 DESCRIPTION With TO-3PFa package Complement to type 2SC2681 High transition frequency APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVC
2sa1141.pdf
isc Silicon PNP Power Transistor 2SA1141DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -115V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2681Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifierHigh frequency power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2N6049
History: 2N6049
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D