2SA1141R Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA1141R
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 115 V
Maximum Collector-Emitter Voltage |Vce|: 115 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 90(typ) MHz
Collector Capacitance (Cc): 390 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO3PN
2SA1141R Transistor Equivalent Substitute - Cross-Reference Search
2SA1141R Datasheet (PDF)
2sa1141r 2sa1141q.pdf
SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1141DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -115V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2681APPLICATIONSAudio frequency power amplifierHigh frequency power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -115 VCBO
2sa1141.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1141 DESCRIPTION With TO-3PFa package Complement to type 2SC2681 High transition frequency APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVC
2sa1141.pdf
isc Silicon PNP Power Transistor 2SA1141DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -115V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC2681Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifierHigh frequency power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
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