2SA1744L Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1744L
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 30(typ) MHz
Capacitancia de salida (Cc): 300 pF
Ganancia de corriente contínua (hfe): 150
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de 2SA1744L
Principales características: 2SA1744L
2sa1744m 2sa1744l 2sa1744k.pdf
SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1744 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = -2V , I = -3A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -8A, I = -0.4A) CE(sat) C B APPLICATIONS This type of power transistor is developed for high-speed switching and f
2sa1744.pdf
DATA SHEET SILICON POWER TRANSISTOR 2SA1744 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1744 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT mm) switching and features a high hFE at Low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulation type package contributes
2sa1744t2tl.pdf
2SA1744T2TL Silicon PNP Power Transistor DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = -2V , I = -3A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -8A, I = -0.4A) CE(sat) C B APPLICATIONS This type of power transistor is developed for high-speed switching and features a high h at low V ,which
2sa1744.pdf
isc Silicon PNP Power Transistor 2SA1744 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = -2V , I = -3A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -8A, I = -0.4A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This type of power t
Otros transistores... 2SA1265O , 2SA1265R , 2SA1452P , 2SA1452Q , 2SA1742K , 2SA1742L , 2SA1742M , 2SA1744K , 13003 , 2SA1744M , 2SA1758D , 2SA1758E , 2SA1758F , 2SA1940O , 2SA1940R , 2SA1941O , 2SA1941R .
History: MMBT5551 | UP3855
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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