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2SC3181R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC3181R
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 80 W
   Tensión colector-base (Vcb): 120 V
   Tensión colector-emisor (Vce): 120 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 30(typ) MHz
   Capacitancia de salida (Cc): 190 pF
   Ganancia de corriente contínua (hfe): 55
   Paquete / Cubierta: TO3PI

 Búsqueda de reemplazo de transistor bipolar 2SC3181R

 

2SC3181R Datasheet (PDF)

 ..1. Size:178K  cn sptech
2sc3181r 2sc3181o.pdf

2SC3181R
2SC3181R

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC3181DESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Max.) @I = 6ACE(sat) CGood Linearity of hFEComplement to Type 2SA1264APPLICATIONSPower amplifier applicationsRecommend for 55W high fidelity audio frequencyamplifier output stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

 7.1. Size:90K  toshiba
2sc3181.pdf

2SC3181R
2SC3181R

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 7.2. Size:195K  jmnic
2sc3181n.pdf

2SC3181R
2SC3181R

JMnic Product Specification Silicon NPN Power Transistors 2SC3181N DESCRIPTION With TO-3P(I) package Complement to type 2SA1264N APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol

 7.3. Size:203K  inchange semiconductor
2sc3181.pdf

2SC3181R
2SC3181R

isc Silicon NPN Power Transistor 2SC3181DESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Max.) @I = 6ACE(sat) CGood Linearity of hFEComplement to Type 2SA1264Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 55W high fidelity audio frequencyamplifier output stage appl

 7.4. Size:161K  inchange semiconductor
2sc3181n.pdf

2SC3181R
2SC3181R

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3181N DESCRIPTION With TO-3P(I) package Complement to type 2SA1264N APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P

Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

 

 
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