2SC4552M Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC4552M

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 120 typ MHz

Capacitancia de salida (Cc): 180 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: TO220F

 Búsqueda de reemplazo de 2SC4552M

- Selecciónⓘ de transistores por parámetros

 

2SC4552M datasheet

 ..1. Size:310K  cn sptech
2sc4552m 2sc4552l 2sc4552k.pdf pdf_icon

2SC4552M

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC4552 DESCRIPTION With TO-220F package High hFE and low VCE(sat) APPLICATIONS For high-speed switching For use in drivers such as DC-DC converters and actuators. PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 )

 7.1. Size:161K  nec
2sc4552.pdf pdf_icon

2SC4552M

DATA SHEET SILICON POWER TRANSISTOR 2SC4552 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4552 is a power transistor developed for high-speed PACKAGE DRAWING (UNIT mm) switching and features low VCE(sat) and high hFE. This transistor is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-molded insulation type package contribu

 7.2. Size:1279K  cn sps
2sc4552t2tl.pdf pdf_icon

2SC4552M

2SC4552T2TL Silicon NPN Power Transistor DESCRIPTION Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = 2V, I = 3A) FE CE C Low Saturation Voltage- V = 0.3V(Max)@ (I = 8A, I = 0.4A) CE(sat) C B APPLICATIONS Designed for use as a driver in DC/DC converters and actuators. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P

 7.3. Size:213K  inchange semiconductor
2sc4552.pdf pdf_icon

2SC4552M

isc Silicon NPN Power Transistor 2SC4552 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = 2V, I = 3A) FE CE C Low Saturation Voltage- V = 0.3V(Max)@ (I = 8A, I = 0.4A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as a drive

Otros transistores... 2SC4467O, 2SC4467P, 2SC4467Y, 2SC4550K, 2SC4550L, 2SC4550M, 2SC4552K, 2SC4552L, NJW0281G, 2SC5197O, 2SC5197R, 2SC5198O, 2SC5198R, 2SC5200O, 2SC5200R, 2SC6104, 2SD1047D