MJW0281A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJW0281A
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 150 W
Tensión colector-base (Vcb): 250 V
Tensión colector-emisor (Vce): 250 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 75
Paquete / Cubierta: TO3PN
Búsqueda de reemplazo de MJW0281A
MJW0281A Datasheet (PDF)
mjw0281a mjw0302a.pdf

MJW0281A (NPN)MJW0302A (PNP)Preferred DevicesComplementary NPN-PNPPower Bipolar TransistorsThese complementary devices are lower power versions of thepopular MJW3281A and MJW1302A audio output transistors. Withsuperior gain linearity and safe operating area performance, thesehttp://onsemi.comtransistors are ideal for high fidelity audio amplifier output stages andother linea
mjw0281a.pdf

SPTECH Product SpecificationMJW0281ASPTECH Silicon NPN Power TransistorDESCRIPTIONHigh DC current amplifier rateh 50-200@V = 5V,I = 1AFE: CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power audio, disk head positioners and other linearapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
mjw0281at4tl.pdf

MJW0281AT4TLDESCRIPTIONHigh DC current amplifier rateh 50-200@V = 5V,I = 1AFE: CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power audio, disk head positioners and other linearapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 250 VCBOV Collector-Emitter V
Otros transistores... 2SC5197O , 2SC5197R , 2SC5198O , 2SC5198R , 2SC5200O , 2SC5200R , 2SC6104 , 2SD1047D , BC549 , MJW0302A , MJW0302G , MN1526O , MN1526P , MN1526R , MP1526O , MP1526P , MP1526R .
History: DTS801
History: DTS801



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