MJW0281A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MJW0281A
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 150 W
   Tensión colector-base (Vcb): 250 V
   Tensión colector-emisor (Vce): 250 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 15 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 75
Paquete / Cubierta: TO3PN

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MJW0281A Datasheet (PDF)

..1. Size:67K onsemi
mjw0281a mjw0302a.pdf

MJW0281A (NPN)MJW0302A (PNP)Preferred DevicesComplementary NPN-PNPPower Bipolar TransistorsThese complementary devices are lower power versions of thepopular MJW3281A and MJW1302A audio output transistors. Withsuperior gain linearity and safe operating area performance, thesehttp://onsemi.comtransistors are ideal for high fidelity audio amplifier output stages andother linea

..2. Size:339K cn sptech
mjw0281a.pdf

SPTECH Product SpecificationMJW0281ASPTECH Silicon NPN Power TransistorDESCRIPTIONHigh DC current amplifier rateh 50-200@V = 5V,I = 1AFE: CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power audio, disk head positioners and other linearapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

0.1. Size:1428K cn sps
mjw0281at4tl.pdf

MJW0281AT4TLDESCRIPTIONHigh DC current amplifier rateh 50-200@V = 5V,I = 1AFE: CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power audio, disk head positioners and other linearapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 250 VCBOV Collector-Emitter V

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N1500-18

Liste

Recientemente añadidas las descripciónes de los transistores:

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