MJW0281A Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJW0281A

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 150 W

Tensión colector-base (Vcb): 250 V

Tensión colector-emisor (Vce): 250 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 75

Encapsulados: TO3PN

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MJW0281A datasheet

 ..1. Size:67K  onsemi
 mjw0281a mjw0302a.pdf pdf_icon

MJW0281A

MJW0281A (NPN) MJW0302A (PNP) Preferred Devices Complementary NPN-PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular MJW3281A and MJW1302A audio output transistors. With superior gain linearity and safe operating area performance, these http //onsemi.com transistors are ideal for high fidelity audio amplifier output stages and other linea

 ..2. Size:339K  cn sptech
 mjw0281a.pdf pdf_icon

MJW0281A

SPTECH Product Specification MJW0281A SPTECH Silicon NPN Power Transistor DESCRIPTION High DC current amplifier rate h 50-200@V = 5V,I = 1A FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power audio, disk head positioners and other linear applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

 0.1. Size:1428K  cn sps
 mjw0281at4tl.pdf pdf_icon

MJW0281A

MJW0281AT4TL DESCRIPTION High DC current amplifier rate h 50-200@V = 5V,I = 1A FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power audio, disk head positioners and other linear applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 250 V CBO V Collector-Emitter V

Otros transistores... 2SC5197O, 2SC5197R, 2SC5198O, 2SC5198R, 2SC5200O, 2SC5200R, 2SC6104, 2SD1047D, 2SD669, MJW0302A, MJW0302G, MN1526O, MN1526P, MN1526R, MP1526O, MP1526P, MP1526R