MJW0281A Datasheet, Equivalent, Cross Reference Search
Type Designator: MJW0281A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 75
Noise Figure, dB: -
Package: TO3PN
MJW0281A Transistor Equivalent Substitute - Cross-Reference Search
MJW0281A Datasheet (PDF)
mjw0281a mjw0302a.pdf
MJW0281A (NPN)MJW0302A (PNP)Preferred DevicesComplementary NPN-PNPPower Bipolar TransistorsThese complementary devices are lower power versions of thepopular MJW3281A and MJW1302A audio output transistors. Withsuperior gain linearity and safe operating area performance, thesehttp://onsemi.comtransistors are ideal for high fidelity audio amplifier output stages andother linea
mjw0281a.pdf
SPTECH Product SpecificationMJW0281ASPTECH Silicon NPN Power TransistorDESCRIPTIONHigh DC current amplifier rateh 50-200@V = 5V,I = 1AFE: CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power audio, disk head positioners and other linearapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U
mjw0281at4tl.pdf
MJW0281AT4TLDESCRIPTIONHigh DC current amplifier rateh 50-200@V = 5V,I = 1AFE: CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power audio, disk head positioners and other linearapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 250 VCBOV Collector-Emitter V
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
