MJW0281A Datasheet. Specs and Replacement

Type Designator: MJW0281A  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 250 V

Maximum Collector-Emitter Voltage |Vce|: 250 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 75

Noise Figure, dB: -

Package: TO3PN

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MJW0281A datasheet

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 mjw0281a mjw0302a.pdf pdf_icon

MJW0281A

MJW0281A (NPN) MJW0302A (PNP) Preferred Devices Complementary NPN-PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular MJW3281A and MJW1302A audio output transistors. With superior gain linearity and safe operating area performance, these http //onsemi.com transistors are ideal for high fidelity audio amplifier output stages and other linea... See More ⇒

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MJW0281A

SPTECH Product Specification MJW0281A SPTECH Silicon NPN Power Transistor DESCRIPTION High DC current amplifier rate h 50-200@V = 5V,I = 1A FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power audio, disk head positioners and other linear applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U... See More ⇒

 0.1. Size:1428K  cn sps

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MJW0281A

MJW0281AT4TL DESCRIPTION High DC current amplifier rate h 50-200@V = 5V,I = 1A FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power audio, disk head positioners and other linear applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 250 V CBO V Collector-Emitter V... See More ⇒

Detailed specifications: 2SC5197O, 2SC5197R, 2SC5198O, 2SC5198R, 2SC5200O, 2SC5200R, 2SC6104, 2SD1047D, 2SD669, MJW0302A, MJW0302G, MN1526O, MN1526P, MN1526R, MP1526O, MP1526P, MP1526R

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