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STD888T4 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STD888T4
   Código: D888
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 15 W
   Tensión colector-base (Vcb): 45 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: TO252

 Búsqueda de reemplazo de transistor bipolar STD888T4

 

STD888T4 Datasheet (PDF)

 ..1. Size:185K  st
std888t4.pdf

STD888T4
STD888T4

STD888T4Medium Current, High Performance, Low VoltagePNP TransistorGeneral features Very low Collector to Emitter saturation voltage D.C. Current gain, hFE >100 5A continuous collector current Surface mounting DPAK(TO-252) power package in tape & reel packing3 In compliance with the 2002/93/EC European 1DirectiveDPAK(TO-252)DescriptionThe device in

 8.1. Size:126K  st
std888.pdf

STD888T4
STD888T4

STD888HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOROrdering Code MarkingSTD888 D888 VERY LOW COLLECTOR TO EMITTERSATURATION VOLTAGE DC CURRENT GAIN, h > 100FE3 5 A CONTINUOUS COLLECTOR CURRENT1 SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (Suffix"T4")DPAKAPPLICATIONS TO-252 POWER MANAGEMENT IN PORTABLE(Suffix "T4")EQUIPMEN

 8.2. Size:126K  utc
std888.pdf

STD888T4
STD888T4

UNISONIC TECHNOLOGIES CO., LTD STD888 Preliminary PNP EPITAXIAL SILICON TRANSISTOR HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC STD888 is a high current, high performance, low voltage PNP transistor; it uses UTCs advanced technology to provide customers high DC current gain and very low saturation voltage. The UTC STD888 is suitable f

 8.3. Size:217K  inchange semiconductor
std888.pdf

STD888T4
STD888T4

isc Silicon PNP Power Transistor STD888DESCRIPTIONLow Collector-Emitter Saturation Voltage-: V )= -0.7V(Max)( I = -5A; I = -0.25A)CE(sat C BDC Current Gain -h = 150(Min)@ I = -0.5AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsVoltage regulation in bias supply circuits applicationsS

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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