2SA940T1TL Todos los transistores

 ..1. Size:1295K  cn sps
 2sa940t1tl.pdf

2SA940T1TL Silicon PNP Power Transistor DESCRIPTION Collector-Emitter Breakdown Voltage V = -150V(Min) (BR)CEO DC Current Gain h = 40-140@ I = -0.5A FE C Complement to Type 2SC2073 APPLICATIONS Designed for use in general purpose power amplifier , vertical output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -

 8.1. Size:165K  toshiba
 2sa940a.pdf

 8.2. Size:396K  jiangsu
 2sa940.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors 2SA940 TRANSISTOR (PNP) TO-220-3L 1. BASE FEATURES 2. COLLECTOR Wide Safe Operating Area. 3. EMITTER Complementary to 2SC2703 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Paramenter Value Unit VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -15

 8.3. Size:197K  jmnic
 2sa940.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA940 DESCRIPTION With TO-220 package Complement to type 2SC2073 APPLICATIONS Power amplifier applications Vertical output applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Col

 8.4. Size:223K  lge
 2sa940.pdf

2SA940(PNP) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features Wide safe Operating Area. Complementary to 2SC2703 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Paramenter Value Units VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Co

 8.5. Size:227K  china
 2sa940a 3ca940a.pdf

2SA940A(3CA940A) PNP /SILICON PNP TRANSISTOR Purpose Power amplifier applications, vertical output applications. 2SC2073A(3DA2073A) Features Complementary to 2SC2073A(3DA2073A). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -150 V CBO V -1

 8.6. Size:375K  lzg
 2sa940 3ca940.pdf

2SA940(3CA940) PNP /SILICON PNP TRANSISTOR Purpose Power amplifier applications, vertical output applications. 2SC2073(3DA2073) Features Complementary to 2SC2073(3DA2073). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -150 V CBO V -150 V

 8.7. Size:1966K  jsmsemi
 2sa940.pdf

2SA940 PNP / Descriptions TO-220 PNP Silicon PNP transistor in a TO-220 Plastic Package. / Features PIN1 Base PIN 2 Collector 1 2SC2073 2 3 PIN 3 Emitter Complementary to 2SC2073. / Applications Power amplifier applications, vertical ou

 8.8. Size:969K  cn evvo
 2sa940.pdf

2SA940 Silicon PNP transistor / Descriptions TO-220 PNP Silicon PNP transistor in a TO-220 Plastic Package. / Features PIN1 Base PIN 2 Collector 1 2SC2073 2 3 PIN 3 Emitter Complementary to 2SC2073. / Applications Power amplifier applications, vertical outpu

 8.9. Size:422K  cn sptech
 2sa940.pdf

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA940 DESCRIPTION Collector-Emitter Breakdown Voltage V = -150V(Min) (BR)CEO DC Current Gain h = 40-140@ I = -0.5A FE C Complement to Type 2SC2073 APPLICATIONS Designed for use in general purpose power amplifier , vertical output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 8.10. Size:201K  inchange semiconductor
 2sa940.pdf

isc Silicon PNP Power Transistor 2SA940 DESCRIPTION Collector-Emitter Breakdown Voltage V = -150V(Min) (BR)CEO DC Current Gain h = 40-140@ I = -0.5A FE C Complement to Type 2SC2073 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier , vertical output applications. ABSOLUTE