Справочник транзисторов. 2SA940T1TL

 

Биполярный транзистор 2SA940T1TL - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SA940T1TL
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 25 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 150 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 150 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 1.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 4 MHz
   Статический коэффициент передачи тока (hfe): 40
   Корпус транзистора: TO220C

 Аналоги (замена) для 2SA940T1TL

 

 

2SA940T1TL Datasheet (PDF)

 ..1. Size:1295K  cn sps
2sa940t1tl.pdf

2SA940T1TL
2SA940T1TL

2SA940T1TLSilicon PNP Power TransistorDESCRIPTIONCollector-Emitter Breakdown Voltage: V = -150V(Min)(BR)CEODC Current Gain: h = 40-140@ I = -0.5AFE CComplement to Type 2SC2073APPLICATIONSDesigned for use in general purpose power amplifier ,vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -

 8.1. Size:165K  toshiba
2sa940a.pdf

2SA940T1TL
2SA940T1TL

 8.2. Size:396K  jiangsu
2sa940.pdf

2SA940T1TL
2SA940T1TL

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors 2SA940 TRANSISTOR (PNP) TO-220-3L1. BASE FEATURES 2. COLLECTOR Wide Safe Operating Area. 3. EMITTER Complementary to 2SC2703 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Paramenter Value UnitVCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -15

 8.3. Size:197K  jmnic
2sa940.pdf

2SA940T1TL
2SA940T1TL

JMnic Product Specification Silicon PNP Power Transistors 2SA940 DESCRIPTION With TO-220 package Complement to type 2SC2073 APPLICATIONS Power amplifier applications Vertical output applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Col

 8.4. Size:223K  lge
2sa940.pdf

2SA940T1TL
2SA940T1TL

2SA940(PNP) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features Wide safe Operating Area. Complementary to 2SC2703 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Paramenter Value UnitsVCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Co

 8.5. Size:227K  china
2sa940a 3ca940a.pdf

2SA940T1TL
2SA940T1TL

2SA940A(3CA940A) PNP /SILICON PNP TRANSISTOR : Purpose: Power amplifier applications, vertical output applications. : 2SC2073A(3DA2073A) Features: Complementary to 2SC2073A(3DA2073A). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -150 V CBO V -1

 8.6. Size:375K  lzg
2sa940 3ca940.pdf

2SA940T1TL
2SA940T1TL

2SA940(3CA940) PNP /SILICON PNP TRANSISTOR : Purpose: Power amplifier applications, vertical output applications. : 2SC2073(3DA2073) Features: Complementary to 2SC2073(3DA2073). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -150 V CBO V -150 V

 8.7. Size:1966K  jsmsemi
2sa940.pdf

2SA940T1TL
2SA940T1TL

2SA940PNP / Descriptions TO-220 PNP Silicon PNP transistor in a TO-220 Plastic Package. / Features PIN1Base PIN 2Collector 1 2SC2073 2 3 PIN 3Emitter Complementary to 2SC2073. / Applications Power amplifier applications, vertical ou

 8.8. Size:969K  cn evvo
2sa940.pdf

2SA940T1TL
2SA940T1TL

2SA940Silicon PNP transistor / Descriptions TO-220 PNP Silicon PNP transistor in a TO-220 Plastic Package. / Features PIN1Base PIN 2Collector 1 2SC2073 2 3PIN 3Emitter Complementary to 2SC2073. / Applications Power amplifier applications, vertical outpu

 8.9. Size:422K  cn sptech
2sa940.pdf

2SA940T1TL
2SA940T1TL

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA940DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -150V(Min)(BR)CEODC Current Gain: h = 40-140@ I = -0.5AFE CComplement to Type 2SC2073APPLICATIONSDesigned for use in general purpose power amplifier ,vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 8.10. Size:201K  inchange semiconductor
2sa940.pdf

2SA940T1TL
2SA940T1TL

isc Silicon PNP Power Transistor 2SA940DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -150V(Min)(BR)CEODC Current Gain: h = 40-140@ I = -0.5AFE CComplement to Type 2SC2073Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier ,vertical output applications.ABSOLUTE

Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP31C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
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