2SC2625T4TL Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC2625T4TL
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80 W
Tensión colector-base (Vcb): 450 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 10
Encapsulados: TO3PN
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2SC2625T4TL datasheet
2sc2625t4tl.pdf
2SC2625T4TL Silicon NPN Power Transistor DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 450 V
2sc2625b.pdf
RoHS 2SC2625B RoHS SEMICONDUCTOR Nell High Power Products Silicon NPN triple diffusion planar transistor (High voltage switching transistor) 10A/400V/80W 15.6 0.4 4.8 0.2 9.6 2.0 0.1 3.2 0,1 TO-3P(B) 2 3 FEATURES +0.2 +0.2 0.65 1.05 -0.1 -0.1 High-speed switching High collector to base voltage VCBO 5.45 0.1 5.45 0.1 1.4 Satisfactory linearity of foward cur
2sc2625.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC2625 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT
Otros transistores... 2SA1492T4BL, 2SA1744T2TL, 2SA1746T5TL, 2SA1941T6TL, 2SA1943T7TL, 2SA940T1TL, 2SC2073T1TL, 2SC2246T3BL, BC548, 2SC3320T4TL, 2SC3834T1TL, 2SC3835T4TL, 2SC3856T4TL, 2SC3907T4TL, 2SC3997T7TL, 2SC3998T7TL, 2SC4110T4TL
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