2SC2625T4TL - описание и поиск аналогов

2SC2625T4TL Silicon NPN Power Transistor DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 450 V

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RoHS 2SC2625B RoHS SEMICONDUCTOR Nell High Power Products Silicon NPN triple diffusion planar transistor (High voltage switching transistor) 10A/400V/80W 15.6 0.4 4.8 0.2 9.6 2.0 0.1 3.2 0,1 TO-3P(B) 2 3 FEATURES +0.2 +0.2 0.65 1.05 -0.1 -0.1 High-speed switching High collector to base voltage VCBO 5.45 0.1 5.45 0.1 1.4 Satisfactory linearity of foward cur

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC2625 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2625 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25