2SC3320T4TL
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC3320T4TL
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80
W
Tensión colector-base (Vcb): 500
V
Tensión colector-emisor (Vce): 400
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 15
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta:
TO3PN
Búsqueda de reemplazo de transistor bipolar 2SC3320T4TL
2SC3320T4TL
Datasheet (PDF)
..1. Size:1299K cn sps
2sc3320t4tl.pdf
2SC3320T4TLSilicon NPN Power TransistorDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 V
7.1. Size:191K utc
2sc3320.pdf
UNISONIC TECHNOLOGIES CO.,LTD 2SC3320 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED SWITCHING FEATURES * High voltage, high speed switching * High reliability ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC3320L-x-T3P-T 2SC3320L-x-T3P-T TO-3P B C E Tube2SC3320L-x-T3N-T 2SC3320L-x-T3N-T TO-3PN B C E T
7.2. Size:109K fuji
2sc3320.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
7.3. Size:230K nell
2sc3320b.pdf
RoHS RoHS 2SC3320BSEMICONDUCTORNell High Power ProductsSilicon NPN triple diffusion planar transistor(High voltage switching transistor)15A/400V/150W15.60.44.80.29.62.00.13.20,1TO-3P(B)23+0.2+0.20.651.05-0.1-0.1FEATURES5.450.1 5.450.11.4High-speed switchingB C EHigh collector to base voltage, VCBOSatisfactory linearity of fow
7.4. Size:427K cn sptech
2sc3320.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC3320DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
7.5. Size:199K inchange semiconductor
2sc3320.pdf
isc Silicon NPN Power Transistor 2SC3320DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXI
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