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2SC3907T4TL . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC3907T4TL
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 130 W
   Tensión colector-base (Vcb): 180 V
   Tensión colector-emisor (Vce): 180 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 12 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 30(typ) MHz
   Capacitancia de salida (Cc): 270 pF
   Ganancia de corriente contínua (hfe): 55
   Paquete / Cubierta: TO3PI

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2SC3907T4TL Datasheet (PDF)

 ..1. Size:1284K  cn sps
2sc3907t4tl.pdf

2SC3907T4TL 2SC3907T4TL

2SC3907T4TLSilicon NPN Power TransistorDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1516APPLICATIONSPower amplifier applicationsRecommend for 80W high fidelity audio frequencyamplifier output stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base

 7.1. Size:48K  wingshing
2sc3907.pdf

2SC3907T4TL

2SC3907 NPN PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SA1516 ABSOLUTE MAXIMUM RATING (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 180 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 12 A

 7.2. Size:177K  cn sptech
2sc3907r 2sc3907o.pdf

2SC3907T4TL 2SC3907T4TL

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC3907DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1516APPLICATIONSPower amplifier applicationsRecommend for 80W high fidelity audio frequencyamplifier output stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

 7.3. Size:223K  inchange semiconductor
2sc3907.pdf

2SC3907T4TL 2SC3907T4TL

isc Silicon NPN Power Transistor 2SC3907DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1516Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 80W high fidelity audio frequencyamplifier output stage applications

 7.4. Size:240K  inchange semiconductor
2sc3907s.pdf

2SC3907T4TL 2SC3907T4TL

isc Silicon NPN Power Transistor 2SC3907SDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1516SMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 80W high fidelity audio frequencyamplifier output stage applicatio

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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