2SC5200T7TL . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC5200T7TL
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 150 W
Tensión colector-base (Vcb): 230 V
Tensión colector-emisor (Vce): 230 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 30(typ) MHz
Capacitancia de salida (Cc): 200 pF
Ganancia de corriente contínua (hfe): 55
Paquete / Cubierta: TO3PL
Búsqueda de reemplazo de transistor bipolar 2SC5200T7TL
2SC5200T7TL Datasheet (PDF)
2sc5200t7tl.pdf
2SC5200T7TLSilicon NPN Power TransistorDESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = 230V(Min)(BR)CEOComplement to Type 2SA1943APPLICATIONSPower amplifier applicationsRecommend for 100W high fidelity audio frequency amplifieroutput stage applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER
2sc5200.pdf
2SC5200High power NPN epitaxial planar bipolar transistorPreliminary dataFeatures High breakdown voltage VCEO = 230 V Typical fT = 30 MHzApplication Audio power amplifier321DescriptionTO-264This device is a NPN transistor manufactured using new BiT-LA (bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity
2sc5200n.pdf
2SC5200NBipolar Transistors Silicon NPN Triple-Diffused Type2SC5200N2SC5200N2SC5200N2SC5200N1. Applications1. Applications1. Applications1. Applications Power Amplifiers2. Features2. Features2. Features2. Features(1) High collector voltage: VCEO = 230 V (min)(2) Complementary to 2SA1943N(3) Recommended for 100-W high-fidelity audio frequency amplifier output
2sc5200r 2sc5200o.pdf
2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 230 V (min) Complementary to 2SA1943 Suitable for use in 100-W high fidelity audio amplifiers output stage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collecto
2sc5200.pdf
2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit: mm High breakdown voltage: V = 230 V (min) CEO Complementary to 2SA1943 Suitable for use in 100-W high fidelity audio amplifiers output stage Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 230 VCollector-emitter
2sc5200 fjl4315.pdf
January 20092SC5200/FJL4315NPN Epitaxial Silicon TransistorApplications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability: IC = 17A.TO-2641 High Power Dissipation : 150watts. High Frequency : 30MHz. 1.Base 2.Collector 3.Emitter High Voltage : VCEO=250V Wide S.O.A for reliable operation. Excel
fjl4315 2sc5200.pdf
DATA SHEETwww.onsemi.comNPN Epitaxial SiliconTransistorFJL4315, 2SC52001. Base2. Collector3. EmitterFeatures1 High Current Capability: IC = 17 ATO-264-3LDCASE 340CA High Power Dissipation: 150 W High Frequency: 30 MHz High Voltage: VCEO = 250 VMARKING DIAGRAM Wide S.O.A. for Reliable Operation Excellent Gain Linearity for Low THD Comple
2sc5200.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS FEATURES * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. * Complementary to UTC 2SA1943 ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC5200-x-T3L-T 2SC5200-x-T3L-T TO-3PL B C E Tubeww
2sc5200bl.pdf
RoHS 2SC5200BL Series RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN triple diffusion planar transistor15A/230V/150W5.0020.000.2018.003.300.20TO-3PLFEATURESHigh breakdown voltage, VCEO = 230V (min) Complementary to 2SA1943BL0.603.20TO-3PL package which can be installed to the 5.450.05 5.450.05heat sink with one screw1 2 3 APPLICATIONSSuit
2sc5200.pdf
2SC5200Minos High Power ProductsNPN TRANSISTORSFeatures:Power Amplifier ApplicationsComplementaryto 2SA1943Highcollector voltage:VCEO=230V (min)Recommendedfor 100-Whigh-fidelity audiofrequency amplifierOutput stageNote: Using continuously under heavy loads (e.g. theapplicationof hightemperature/current/voltageandthe significant change intemperature, etc.) may causethis pro
2sc5200r 2sc5200o.pdf
SPTECH Product SpecificationINCHANGE Semiconductor isc Product SpecificationSPTECH Silicon NPN Power Transistor 2SC5200DESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = 230V(Min)(BR)CEOComplement to Type 2SA1943APPLICATIONSPower amplifier applicationsRecommend for 100W high fidelity audio frequency amplifie
2sc5200n.pdf
isc Silicon NPN Power Transistor 2SC5200NDESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = 230V(Min)(BR)CEOComplement to Type 2SA1943NMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 100W high fidelity audio frequency am
2sc5200h.pdf
isc Silicon NPN Power Transistor 2SC5200HDESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 100W high fidelity audio frequency amplifieroutput stage applicati
2sc5200.pdf
isc Silicon NPN Power Transistor 2SC5200DESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = 230V(Min)(BR)CEOComplement to Type 2SA1943Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 100W high fidelity audio frequency ampl
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
