BU406DT9TL . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BU406DT9TLSilicon NPN Power TransistorDESCRIPTIONHigh Voltage: V = 400V(Min)CEVLow Saturation Voltage-: V = 1.0V(Max.)@ I = 5ACE(sat) CAPPLICATIONSDesigned for use in horizontal deflection output stagesof TVs and CRTsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 400 VCBOV Collector-Emitter Voltage 200 VCEOP

BU406DBU407DSILICON NPN SWITCHING TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTOR VERY HIGH SWITCHING SPEED APPLICATIONS: HORIZONTAL DEFLECTION FORMONOCHROME TV 321 TO-220DESCRIPTION The BU406D and BU407D are silicon planarepitaxial NPN transistors with integrated damperdiode, in Jedec TO-220 plastic package. Theyare fast switching, devices for us

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor BU406DDESCRIPTIONHigh Voltage: V = 400V(Min)CEVLow Saturation Voltage-: V = 1.0V(Max.)@ I = 5ACE(sat) CAPPLICATIONSDesigned for use in horizontal deflection output stagesof TVs and CRTsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 400 VCBOV Collect

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU406D BU407D DESCRIPTION With TO-220C package High voltage Fast switching speed Low saturation voltage Built-in damper diode APPLICATIONS For use in horizontal deflection output stages of TVs and CTVs circuits PINNING PIN DESCRIPTION1 Base Collector;connected to 2 moun

isc Silicon NPN Power Transistor BU406DDESCRIPTIONHigh Voltage: V = 400V(Min)CEVFast Switching Speed-: t = 0.75s(Max)fLow Saturation Voltage-: V = 1.0V(Max)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection output stagesof TVs and CRTsABSOLUTE MAXI