BU406DT9TL . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BU406DT9TL
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 65 W
Tensión colector-base (Vcb): 400 V
Tensión colector-emisor (Vce): 200 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 7 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: TO252
Búsqueda de reemplazo de transistor bipolar BU406DT9TL
BU406DT9TL Datasheet (PDF)
bu406dt9tl.pdf
BU406DT9TLSilicon NPN Power TransistorDESCRIPTIONHigh Voltage: V = 400V(Min)CEVLow Saturation Voltage-: V = 1.0V(Max.)@ I = 5ACE(sat) CAPPLICATIONSDesigned for use in horizontal deflection output stagesof TVs and CRTsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 400 VCBOV Collector-Emitter Voltage 200 VCEOP
bu406d bu407d.pdf
BU406DBU407DSILICON NPN SWITCHING TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTOR VERY HIGH SWITCHING SPEED APPLICATIONS: HORIZONTAL DEFLECTION FORMONOCHROME TV 321 TO-220DESCRIPTION The BU406D and BU407D are silicon planarepitaxial NPN transistors with integrated damperdiode, in Jedec TO-220 plastic package. Theyare fast switching, devices for us
bu406d.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor BU406DDESCRIPTIONHigh Voltage: V = 400V(Min)CEVLow Saturation Voltage-: V = 1.0V(Max.)@ I = 5ACE(sat) CAPPLICATIONSDesigned for use in horizontal deflection output stagesof TVs and CRTsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 400 VCBOV Collect
bu406d bu407d.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU406D BU407D DESCRIPTION With TO-220C package High voltage Fast switching speed Low saturation voltage Built-in damper diode APPLICATIONS For use in horizontal deflection output stages of TVs and CTVs circuits PINNING PIN DESCRIPTION1 Base Collector;connected to 2 moun
bu406d.pdf
isc Silicon NPN Power Transistor BU406DDESCRIPTIONHigh Voltage: V = 400V(Min)CEVFast Switching Speed-: t = 0.75s(Max)fLow Saturation Voltage-: V = 1.0V(Max)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection output stagesof TVs and CRTsABSOLUTE MAXI
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
