BC848B-AU . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BC848B-AU
Código: 48B
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.33 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 4.5(max) pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar BC848B-AU
BC848B-AU Datasheet (PDF)
bc846a-au bc847a-au bc848a-au bc846b-au bc847b-au bc848b-au bc849b-au bc850b-au bc847c-au bc848c-au bc849c-au bc850c-au.pdf
BC846-AU,BC847-AU,BC848-AU,BC849-AU,BC850-AU SERIESNPN GENERAL PURPOSE TRANSISTORSVOLTAGE 30/45/65 Volt POWER 330 mWattFEATURES General purpose amplifier applications0.120(3.04)0.110(2.80) NPN epitaxial silicon, planar design Collector current IC = 100mA Acqire quality system certificate : TS16949 AEC-Q101 qualified Lead free in compliance with EU RoHS 20
bc848a-g bc848b-g.pdf
Small Signal TransistorBC846A-G Thru. BC848C-G (NPN)RoHS DeviceFeatures -Power dissipationOPCM: 0.20W (@TA=25 C)SOT-23 -Collector currentICM: 0.1A -Collector-base voltage0.118(3.00)0.110(2.80)VCBO: BC846=80V3BC847=50V0.055(1.40)BC848=30V0.047(1.20) -Operating and storage junction temperature 1 2Orange: TJ, TSTG= -65 to +150 C 0.079(2.00)0.071(1.80)
bc848b bc848w.pdf
BC848 series30 V, 100 mA NPN general-purpose transistorsRev. 07 17 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECBC848B SOT23 - TO-236AB BC858BBC848W SOT323 SC-70 - BC858W1.2 Features G
bc848bw bc848b.pdf
BC848BW / BC848B Transistors NPN General Purpose Transistor BC848BW / BC848B Features External dimensions (Unit : mm) 1) BVCEO minimum is 30V (IC=1mA) BC848BW2) Complements the BC858B / BC858BW. SOT-3232.00.21.30.1 0.90.10.65 0.650.2 0.70.1(1) (2)0~0.1 (3)+0.10.3 (1) Emitter -0 0.150.05ROHM : UMT3 (2) BaseAll terminals have same dimensionsEI
bc848bw bc848bw bc848b.pdf
BC848BW / BC848B Transistors NPN General Purpose Transistor BC848BW / BC848B Features External dimensions (Unit : mm) 1) BVCEO minimum is 30V (IC=1mA) BC848BW2) Complements the BC858B / BC858BW. 2.00.21.30.1 0.90.10.65 0.650.2 0.70.1(1) (2)0~0.1 (3)+0.10.3 (1) Emitter -0 0.150.05ROHM : UMT3 (2) BaseAll terminals have same dimensionsEIAJ : SC-7
bc846aw bc846bw bc847aw bc847bw bc847cw bc848aw bc848bw bc848cw.pdf
BC846AW - BC848CWNPN SURFACE MOUNT SMALL SIGNAL TRANSISTORFeatures Ideally Suited for Automatic InsertionSOT-323 Complementary PNP Types AvailableA(BC856W-BC858W) Dim Min MaxCA For Switching and AF Amplifier Applications 0.25 0.40B1.15 1.35Mechanical DataB CC2.00 2.20 Case: SOT-323, Molded PlasticD0.65 NominalB E Case material - UL Flammability Rating
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf
BC846A-BC848C NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Ideally Suited for Automatic Insertion Case: SOT23 Complementary PNP Types: BC856 BC858 Case material: molded plastic, Green molding compound For switching and AF Amplifier Applications UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS compliant (Note
bc848bf bc847bf.pdf
BC846...-BC850...NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC856...-BC860...(PNP) Pb-free (RoHS compliant) package1) Qualified according AEC Q1011Pb-containing package may be available upon special request20
bc847a bc847b bc847bl3 bc847bw bc847c bc847cw bc848a bc848b bc848bl3 bc848bw bc848c bc848cw bc849b bc849c bc849cw bc850b bc850bw bc850c bc850cw.pdf
BC847...-BC850...NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC857...-BC860...(PNP) Pb-free (RoHS compliant) package Qualified according AEC Q1011)1BC847BL3 is not qualified according AEC Q101Type Marking Pin
bc846a bc846b bc846bw bc847a bc847b bc847bf bc847bl3 bc847bt bc847bw bc847c bc847cw bc848a bc848aw bc848b bc848bf bc848bl3 bc848bw bc848c bc848cw bc849b bc849bf bc849c bc849cw bc850b bf850bf bc850bw bc850c bc8.p
bc848bl3 bc850bf.pdf
BC846...-BC850...NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC856...-BC860...(PNP) Pb-free (RoHS compliant) package1) Qualified according AEC Q1011Pb-containing package may be available upon special request20
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c bc849b bc849c.pdf
M C CTMMicro Commercial Components BC846A thru BC849CStatic Characteristic h I FE C 10 3000COMMON COMMON EMITTER EMITTER V CE= 5V T a =25 1000 8 T =100 a 20uA18uA6 16uAT =25 14uA a 12uA4 100 10uA 8uA 6uA 24uA I B=2uA 0 100 1 2 3 4 5 6 7 1 10 100 COLLECTOR CURRENT IC (mA) COLLECTOREMITTER VOLTAGE V CE (V) V I
bc848bwt1g.pdf
BC846, BC847, BC848SeriesGeneral PurposeTransistorsNPN Siliconhttp://onsemi.comThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-70/SOT-323 which isCOLLECTORdesigned for low power surface mount applications.3Features1 Pb-Free Packages are AvailableBASE2EMITTERMAXIMUM RATINGS3Rating Symbol Value UnitSC-7
nsvbc848bwt1g.pdf
BC846, BC847, BC848General PurposeTransistorsNPN SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTORFeatures3 S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC
bc848clt1g bc848blt1g.pdf
BC846ALT1 SeriesBC846, BC847 and BC848 are Preferred DevicesGeneral PurposeTransistorsNPN SiliconFeatureshttp://onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: >4000 VCOLLECTOR3ESD Rating - Machine Model: >400 V Pb-Free Packages are Available1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector-Emitter Voltage VCEO V
bc846amtf bc846bmtf bc846cmtf bc847amtf bc847bmtf bc847cmtf bc848bmtf bc848cmtf bc850amtf bc850cmtf.pdf
BC846 / BC847 / BC848 / BC850NPN Epitaxial Silicon TransistorFeatures3 Switching and Amplifier Applications Suitable for Automatic Insertion in Thick and Thin-film Circuits Low Noise: BC8502 Complement to BC856, BC857, BC858, BC859, and BC860SOT-2311. Base 2. Emitter 3. CollectorOrdering Information(1)Part Number Marking Package Packing MethodBC846AMTF 8A
sbc846alt1g sbc846blt1g sbc846blt3g sbc847clt1g sbc848blt1g.pdf
BC846ALT1G Series,SBC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatureshttp://onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: >4000 VCOLLECTORESD Rating - Machine Model: >400 V3 AEC-Q101 Qualified and PPAP Capable1 S Prefix for Automotive and Other Applications Requiring UniqueBASESite and Control Change Requirements
bc846alt1g bc846blt1g bc847alt1g bc847blt1g nsvbc847blt3g bc847clt1g bc848alt1g bc848blt1g bc848clt1g bc849blt1g bc849clt1g bc850blt1g nsvbc850blt1g bc850clt1g nsvbc850clt1g.pdf
BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating - Human Body Model: >4000 VESD Rating - Machine Model: >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR3Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable1 These Devices are Pb-
bc846alt1g bc846blt1g bc846clt1g bc847alt1g bc847blt1g bc847clt1g bc848alt1g bc848blt1g bc848clt1g bc849blt1g bc849clt1g bc850blt1g bc850clt1g.pdf
General PurposeTransistorsNPN SiliconBC846ALT1G SeriesFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating - Human Body Model: > 4000 VESD Rating - Machine Model: > 400 VCOLLECTOR S and NSV Prefix for Automotive and Other Applications Requiring3Unique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE These Device
bc846alt1g bc846blt1g bc847alt1g bc847blt1g bc847clt1g bc848alt1g bc848blt1g bc848clt1g bc849blt1g bc849clt1g bc850blt1g bc850clt1g.pdf
BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatureswww.onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: > 4000 VESD Rating - Machine Model: > 400 VCOLLECTOR3 S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE These Device
bc849clt1g bc848blt3g.pdf
BC846ALT1 SeriesBC846, BC847 and BC848 are Preferred DevicesGeneral PurposeTransistorsNPN SiliconFeatureshttp://onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: >4000 VCOLLECTOR3ESD Rating - Machine Model: >400 V Pb-Free Packages are Available1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector-Emitter Voltage VCEO V
bc846bwt1g bc847awt1g bc847bwt1g bc847cwt1g bc848bwt1g bc848cwt1g.pdf
BC846, BC847, BC848General PurposeTransistorsNPN SiliconThese transistors are designed for general purpose amplifierwww.onsemi.comapplications. They are housed in the SC-70/SOT-323 which isdesigned for low power surface mount applications.COLLECTORFeatures3 S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC
bc846alt1g bc846blt1g bc847alt1g bc847blt1g nsvbc847blt3g bc847clt1g bc848alt1g bc848blt1g bc848clt1g bc849blt1g nsvbc849blt1g bc849clt1g bc849clt3g bc850blt1g nsvbc850blt1g bc850clt1g nsvbc850clt1g.pdf
BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatureswww.onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: > 4000 VESD Rating - Machine Model: > 400 VCOLLECTOR3 S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE These Device
bc846a bc847a bc848a bc846b bc847b bc848b bc847c bc848c.pdf
BC846A/B, BC847A/B/C, BC848A/B/CTaiwan SemiconductorSmall Signal Product200mW, NPN Small Signal TransistorFEATURES- Epitaxial planar die construction- Surface mount device type- Moisture sensitivity level 1- Matte Tin(Sn) lead finish with Nickel(Ni) under plate- Pb free and RoHS compliant- Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC- Halo
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf
BC847 BC846A, B TRANSISTOR (NPN) SOT-23 BC847A, B, C BC848A, B, C 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V VCBO Collector-Base Voltage BC846 80 50 BC847 30 BC848VCEO Collector-Emitter Vo
bc846a bc846b bc846c bc847a bc847b bc847c bc848a bc848b bc848c bc849a bc849b bc849c bc850a bc850b bc850c.pdf
BC846BC850 NPN Silicon Epitaxial Transistor for switching and amplifier applications SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value Unit Collector Base Voltage BC846 VCBO 80 V BC847, BC850 VCBO 50 V BC848, BC849 VCBO 30 V Collector Emitter Voltage BC846 VCEO 65 V BC847, BC850 VCEO 45 V BC848, BC849 VCEO 30 V Emitter Base Voltage BC
lbc848blt1g lbc848blt3g lbc848clt1g lbc848clt3g lbc849blt1g lbc849blt3g lbc849clt1g lbc849clt3g lbc850blt1g lbc850blt3g lbc850clt1g lbc850clt3g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLBC846ALT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with RoHS requirements.31MAXIMUM RATINGS2Rating Symbol Value UnitCollectorEmitter Voltage VCEO VdcSOT23LBC846 6
lbc848blt3g lbc848clt1g lbc848clt3g lbc849blt1g lbc849blt3g lbc849clt1g lbc849clt3g lbc850blt1g lbc850blt3g lbc850clt1g lbc850clt3g lbc848blt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1 LBC846ALT1GS-LBC846ALT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 3and Control C
lbc848bwt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC846AWT1G,BWT1GNPN SiliconLBC847AWT1G,BWT1GWe declare that the material of product compliance with RoHS requirements.CWT1GS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.LBC848AWT1G,BWT1GCWT1G( )ORDERING INFORMATION Pb Free
lbc848bpdw1t1g.pdf
LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC846BPDW1T1GLBC847BPDW1T1GNPN/PNP Duals (Complimentary)LBC847CPDW1T1G These transistors are designed for general purpose amplifierLBC848BPDW1T1Gapplications. They are housed in the SOT363/SC88 which isLBC848CPDW1T1Gdesigned for low power surface mount applications.We declare that the material of product comp
lbc846bdw1t1g lbc846bdw1t3g lbc847bdw1t1g lbc847bdw1t3g lbc847cdw1t1g lbc847cdw1t3g lbc848bdw1t1g lbc848bdw1t3g lbc848cdw1t1g lbc848cdw1t3g lbc846adw1t1g lbc846adw1t3g.pdf
LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN DualsLBC846ADW1T1G These transistors are designed for general purpose amplifierLBC846BDW1T1Gapplications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.LBC847BDW1T1GWe declare that the material of product compliance with LBC847CDW1T1GRoHS requirements.LBC848
lbc846awt1g lbc846bwt1g lbc847awt1g lbc847bwt1g lbc847cwt1g lbc848awt1g lbc848bwt1g lbc848cwt1g.pdf
LESHAN RADIO COMPANY, LTD.LBC846AWT1G,BWT1GGeneral Purpose TransistorsLBC847AWT1G,BWT1GNPN SiliconCWT1GWe declare that the material of product compliance with RoHS requirements.LBC848AWT1G,BWT1GS- Prefix for Automotive and Other Applications Requiring Unique Site andControl Change Requirements; AEC-Q101 Qualified and PPAP Capable.CWT1G( )ORDERING INFORMATIO
lbc847clt3g lbc848alt1g lbc848alt3g lbc848blt1g lbc848blt3g lbc848clt1g lbc848clt3g lbc849blt1g lbc849blt3g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1 LBC846ALT1GS-LBC846ALT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Chang
lbc846bdw1t1g lbc847bdw1t1g lbc847cdw1t1g lbc848bdw1t1g lbc848cdw1t1g lbc846adw1t1g.pdf
LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN DualsLBC846ADW1T1G These transistors are designed for general purpose amplifierLBC846BDW1T1Gapplications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.LBC847BDW1T1GWe declare that the material of product compliance with LBC847CDW1T1GRoHS requirements.LBC848
lbc846bpdw1t1g lbc847bpdw1t1g lbc847cpdw1t1g lbc848bpdw1t1g lbc848cpdw1t1g.pdf
LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC846BPDW1T1GLBC847BPDW1T1GNPN/PNP Duals (Complimentary)LBC847CPDW1T1G These transistors are designed for general purpose amplifierLBC848BPDW1T1Gapplications. They are housed in the SOT363/SC88 which isLBC848CPDW1T1Gdesigned for low power surface mount applications.S-LBC846BPDW1T1GWe declare that the materi
lbc846alt1g lbc846blt1g lbc847alt1g lbc847blt1g lbc847clt1g lbc848alt1g lbc848blt1g lbc848clt1g lbc849blt1g lbc849clt1g lbc850blt1g lbc850clt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1LBC846ALT1G ESD Rating Human Body Model: >4000 VS-LBC846ALT1GESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Chan
lbc848bdw1t1g.pdf
LESHAN RADIO COMPANY, LTD.LBC846ADW1T1GDual General Purpose TransistorsLBC846BDW1T1GNPN DualsLBC847BDW1T1GLBC847CDW1T1G These transistors are designed for general purpose amplifierLBC848BDW1T1Gapplications. They are housed in the SOT363/SC88 which isLBC848CDW1T1Gdesigned for low power surface mount applications.We declare that the material of product compliance wit
lbc848blt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1 LBC846ALT1GS-LBC846ALT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 3and Control C
lbc846bpdw1t1g lbc846bpdw1t3g lbc847bpdw1t1g lbc847bpdw1t3g lbc847cpdw1t1g lbc847cpdw1t3g lbc848bpdw1t1g lbc848bpdw1t3g lbc848cpdw1t1g lbc848cpdw1t3g.pdf
LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsLBC846BPDW1T1GLBC847BPDW1T1GNPN/PNP Duals (Complimentary)LBC847CPDW1T1G These transistors are designed for general purpose amplifierLBC848BPDW1T1Gapplications. They are housed in the SOT363/SC88 which isLBC848CPDW1T1Gdesigned for low power surface mount applications.S-LBC846BPDW1T1GWe declare that the materi
bc846a bc847a bc848a bc846b bc847b bc848b bc849b bc850b bc847c bc848c bc849c bc850c.pdf
BC846,BC847,BC848,BC849,BC850 SERIESNPN GENERAL PURPOSE TRANSISTORSVOLTAGE 30/45/65 Volt POWER 330 mWattFEATURES0.120(3.04) General purpose amplifier applications0.110(2.80) NPN epitaxial silicon, planar design Collector current IC = 100mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. .0.056(1.40) (Ha
bc846aw bc846bw bc847aw bc847bw bc847cw bc848aw bc848bw bc848cw bc849bw bc849cw bc850bw bc850cw.pdf
BC846AW ~ BC850CWNPN GENERAL PURPOSE TRANSISTORS30/45/65 Volt POWERVOLTAGE 250 mWattFEATURES General purpose amplifier applications NPN epitaxial silicon, planar design Collector current IC = 100mA Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standardMECHANICAL DATA Case: SOT-323, Plastic Terminals: Solderable per
bc846aw-au bc847aw-au bc848aw-au bc846bw-au bc847bw-au bc848bw-au bc849bw-au bc850bw-au bc847cw-au bc848cw-au bc849cw-au bc850cw-au.pdf
BC846AW-AU ~ BC850CW-AUNPN GENERAL PURPOSE TRANSISTORS30/45/65 Volt POWER 250 mWattVOLTAGEFEATURES General purpose amplifier applications NPN epitaxial silicon, planar design Collector current IC = 100mA AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standardMECHANICAL DATA Case: SOT-323, Plastic
bc848bw-g bc847bw-g.pdf
Small Signal TransistorBC846AW-G Thru. BC848CW-G (NPN)RoHS DeviceFeatures -Power dissipationPCM: 0.15W (@TA=25C)SOT-323 -Collector currentICM: 0.1A0.087 (2.20) -Collector-base voltage0.079 (2.00)VCBO: BC846W=80V3BC847W=50V0.053(1.35)BC848W=30V0.045(1.15) -Operating and storage junction temperature 1 2range: TJ, TSTG= -55 to +150C0.006 (0.15)0.055
dbc846bpdw1t1g dbc847bpdw1t1g dbc847cpdw1t1g dbc848bpdw1t1g dbc848cpdw1t1g.pdf
Dual General Purpose TransistorsDual General Purpose TransistorsNPN/PNP Duals (Complimentary)DBC846BPDW1T1GDBC847BPDW1T1G These transistors are designed for general purpose amplifierapplications. They are housed in the SOT363/SC88 which isDBC847CPDW1T1Gdesigned for low power surface mount applications.DBC848BPDW1T1GWe declare that the material of product compliance wit
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf
RUMW UMW BC847 BC846A, B TRANSISTOR (NPN) SOT-23 BC847A, B, C BC848A, B, C 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V VCBO Collector-Base Voltage BC846 80 50 BC847 30 BC848VCEO Collect
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf
BC846-8SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N )Features SOT- 23 Ideally suited for automatic insertion For Switching and AF Amplifier Applications Marking: BC846A=1A;BC846B=1B; BC847A=1E;BC847B=1F;BC847C=1G; BC848A=1J;BC848B=1K;BC848C=1L; CB ESymbol Parameter Value Unit V VCBO Collector-Base Voltage 80 BC846BC847 50 30
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf
BC847SOT-23 Plastic-Encapsulate TransistorSOT-23 BC846A, B TRANSISTOR (NPN) BC847A, B, CBC848A, B, C 1. BASE2. EMITTER FEATURES 3. COLLECTOR Ideally suited for automatic insertion For Switching and AF Amplifier ApplicationsPACKAGE SPECIFICATIONS Box Size QTY/BoxReel DIA. Q'TY/Reel Carton Size Q'TY/CartonPackageReel Size(pcs) (pcs) (mm)(mm) (mm) (pcs)S
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf
DATA SHEET BC846A/B,BC847A/B/C,BC848A/B/C NPN GENERAL PURPOSE TRANSISTORS VOLTAGE 30 ~ 65 V CURRENT 100 mA FEATURES IDEALLY SUITED FOR AUTOMATIC INSERTION FOR SWITCHING AND AF AMPLIFIER APPLICATIONS NPN SILICON EPITAXIAL PLANAR TRANSISTOR FOR SWITCHING AND AMPLIFIER APPLICATIONS COLLECTOR CURRENT IC =100mA LEAD FREE AND HALOGEN-FREE MECHANICAL DATA
bc846a bc846b bc846c bc847a bc847b bc847c bc848a bc848b bc848c bc849a bc849b bc849c bc850a bc850b bc850c.pdf
BC846/847/848/849/850 TRANSISTORNPNFEATURES Low current (max. 100 mA) Low voltage (max. 65 V).APPLICATIONS General purpose switching and amplification.1.Base 2.Emitter 3.Collector DESCRIPTIONSOT-23 Plastic PackageNPN transistor in a SOT23 plastic package. PNP complements: BC856 /857/858/859/860.ABSOLUTE MAXIMUM RATINGS (T =25C)AParameter Symbol Val
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf
BC846/7/8 TRANSI STOR (NPN)BC846BC847BC848Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: Ideaiiy suited for automatic insertion For switching and AF amplifier applicationsMAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage 80 BC846 VCBO 50 V BC847 30 BC848Collector-Emitter Voltage 6
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf
BC846/BC847/BC848 TRANSISTOR(NPN)SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features Complementary to BC856/BC857/BC858 Power Dissipation of 200mW Ideally suited for automatic insertion For switching and AF amplifier applicationsMarking: Mechanical DataBC846A=1A BC846B=1B Small Outline Plastic PackageBC847A=
bc846a bc846b bc846c bc847a bc847b bc847c bc848a bc848b bc848c bc849a bc849b bc849c bc850a bc850b bc850c.pdf
BC846 THRU BC850BC846 THRU BC850BC846 THRU BC850BC846 THRU BC850BC8 46 THRU BC8 50TRANSISTOR(NPN)FEATURE Low current (max. 100 mA)SOT-23 Low voltage (max. 65 V).1BASE APPLICATIONS2EMITTER General purpose switching and amplification. 3COLLECTOR DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BC856 /857/858/859/86
bc846aw bc846bw bc847aw bc847bw bc847cw bc848aw bc848bw bc848cw.pdf
RoHS RoHSCOMPLIANT COMPLIANTBC846AW THRU BC848CW NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package: SOT-323 Molding compound meets UL
bc846aq bc846bq bc847aq bc847bq bc847cq bc848aq bc848bq bc848cq.pdf
RoHS COMPLIANT BC846Q THRU BC848Q NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 Part no. with suffix Q means AEC-Q101 qualified Applications General purpose switching and amplification Mechanical Data : SOT-23 Case Terminals: Tin plated leads, solderable per J
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf
RoHS RoHSCOMPLIANT COMPLIANTBC846/BC847/BC848 NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Moisture Sensitivity Level 1 Marking: BC846A=1A; BC846B=1B; BC847A=1E; BC847B=1F; BC847C=1G; BC848A=1J; BC848B=1K: BC848C=1L Maximum Ratings (Ta=25 unless otherwise noted) Symbol Parameter Value UnitCollector-Base Voltage 80 BC84
bc846a bc847a bc848a bc846b bc847b bc848b bc847c bc848c.pdf
BC846/BC847/BC848 BC846/BC847/BC848 SOT-23 Plastic-Encapsulate Transistors(NPN) General description SOT-23 Plastic-Encapsulate Transistors(NPN) FEATURES Complementary to BC856/BC857/BC858 Power Dissipation of 200mW Ideally suited for automatic insertion For switching and AF amplifier applications SOT-23 Small Outline Plastic Package DEVICE MARKING CODE:
bc846a bc847a bc848a bc846b bc847b bc848b bc847c bc848c.pdf
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDBC846/847/848MAXIMUM RATINGS Characteristic Symbol Unit(BC846A,B) (BC847A,B,C) (BC848A,B,C) Collector-Emitter VoltageV 65 45 30 VdcCEOCollector-Base VoltageV 80 50 30 VdcCBOEmitter-Base Voltage
bc846a bc847a bc848a bc846b bc847b bc848b bc846c bc847c bc848c.pdf
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD. BC846BC847BC848 FEATURES NPN General Purpose Transistor MAXIMUM RATINGS Characteristic Symbol Unit BC846A,B,BC847A,B,C BC848A,B,C C Collector-Emitter Voltage V 65 45 30 Vdc CEO Collector-Base V
bc848a bc848b bc848c.pdf
BC848BIPOLAR TRANSISTOR (NPN)FEATURES Complementary to BC858 Ideally suited for automatic insertion For switching and AF amplifier applications Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless othe
bc846a bc846b bc847a bc847b bc847c bc848a bc848b bc848c.pdf
Plastic-Encapsulate TransistorsFEATURES(NPN)BC846A/BFor general AF applications(NPN)BC847A/B/CHigh collector current(NPN)BC848A/B/CHigh current gainLow collector-emitter saturation voltageMarkingBC846A BC846B BC847A BC847B1A 1B 1E 1FBC847C BC848A BC848B BC848C1. BASE2. EMITTER SOT-231G 1J 1K 1L3. COLLECTOMAXIMUM RATINGS (TA=25 unless otherwise noted)Par
bc846a bc847a bc848a bc846b bc847b bc848b bc847c bc848c.pdf
BC846A,B BC847A, B, C BC848A, B, C Features Ideally suited for automatic insertion For Switching and AF Amplifier ApplicationsSOT-23A Dim Min MaxDEVICE MARKING CA 0.37 0.51BC846A=1A; BC846B=1B; B C B1.20 1.40BC847A=1E; BC847B=1F; BC847C=1G; C2.30 2.50TOP VIEWB EBC848A=1J; BC848B=1K: BC848C=1LD0.89 1.03D E
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1837 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
