MMBTA56-AU Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBTA56-AU 📄📄
Código: B56
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 100 MHz
Ganancia de corriente contínua (hFE): 100
Encapsulados: SOT23
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MMBTA56-AU datasheet
..1. Size:394K panjit
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PMMBTA05-AU / MMBTA06-AU / MMBTA55-AU / MMBTA56-AU NPN AND PNP HIGH VOLTAGE TRANSISTOR SOT-23 Unit inch(mm) 60 80V 225mW Voltage Power Features NPN and PNP silicon, planar design Collector current IC = 500mA AEC-Q101 qualified Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive) Green molding compound as per IEC61249 Std.. (
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February 2006 MPSA56/MMBTA56/PZTA56 PNP General Purpose Amplifier Description This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from Process 73 Absolute Maximum Ratings* TA = 25 C unless otherwise specified. Parameter Symbol Value Unit Collector-Emitter Voltage VCES -80 V Collector-Base Voltage VCBO -80 V Emitter-Base Voltag
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
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MMBTA55LT1G, MMBTA56LT1G Driver Transistors PNP Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 1 BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol Value Unit Collector-Emitter Voltage VCEO Vdc MMBTA55 -60 3 MMBTA56 -80 Collector-Base Voltage VCBO Vdc MMBTA55 -60 1 MMBTA56 -80 2 Emitter-Base Voltage VE
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MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series Driver Transistors PNP Silicon www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable SOT-23 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS CASE 318 STYLE 6 Compliant COLLECTOR 3 MAXIMUM RATINGS Rat
7.13. Size:112K onsemi
mmbta56lt1g.pdf
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7.14. Size:222K utc
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UNISONIC TECHNOLOGIES CO., LTD MMBTA56 PNP SILICON TRANSISTOR AMPLIFIER TRANSISTOR FEATURES 3 * Collector-Emitter Voltage VCEO=-80V * Collector Dissipation PD=350mW 1 2 SOT-23 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MMBTA56L-AE3-R MMBTA56G-AE3-R SOT-23 E B C Tape Reel MARKING www.unisonic.com.tw 1 of 5
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www.jscj-elec.com AD-MMBTA56 JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-MMBTA56 Plastic-Encapsulated Transistor AD-MMBTA56 Transistor (PNP) FEATURES General purpose amplifier applications AEC-Q101 qualified MARKING 2GM = Device code 2GM Version 1.0 1 / 6 2021-07-01 www.jscj-elec.com AD-MMBTA56 MAXIMUM RATINGS (T = 25 C unless otherwise specifie
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA56 TRANSISTOR (PNP) SOT 23 FEATURES General Purpose Amplifier Applications MARKING 2GM 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -80 V CBO V Collector-Emitter Voltage -80 V
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SEMICONDUCTOR MMBTA56 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR AUDIO FREQUENCY AMPLIFIER APPLICATIONS. FEATURE E Complementary to MMBTA06 L B L DIM MILLIMETERS _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 MAXIMUM RATING (Ta=25 ) 1 G 1.90 H 0.95 CHARACTERISTIC SYMBOL RATING UNIT J 0.13+0.10/-0.05 K 0.00 0.10 VCBO Collector-B
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MMBTA56 TRANSISTOR(PNP) SOT 23 FEATURES General Purpose Amplifier Applications MARKING 2GM 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -80 V CBO V Collector-Emitter Voltage -80 V CEO VEBO Emitter-Base Voltage -4 V IC Collector Current -500 mA P Collector Power Dissip
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MMBTA56 PNP General Purpose Transistor for amplifier applications On special request, these transistors can be manufactured in different pin configurations. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 80 V Collector Emitter Voltage -VCES 80 V Emitter Base Voltage -VEBO 4 V Collector Current -IC 500 mA
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RoHS RoHS COMPLIANT COMPLIANT MMBTA55 THRU MMBTA56 PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package SOT-23 Molding compound
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