MMBT8050C-1.5A Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMBT8050C-1.5A

Código: X1

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.35 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 25 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 1.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 120 MHz

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT23

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MMBT8050C-1.5A datasheet

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MMBT8050C-1.5A

MMBT8050-1.5A NPN Transistor Features SOT-23 For Switching and AF Amplifer Applications. Equivalent Circuit 1.Base 2.Emitter 3.Collector 3.Collector Marking Code MMBT8050C-1.5A X1 MMBT8050D-1.5A Y1 1.Base 2. Emitter . Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 40

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MMBT8050C-1.5A

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MMBT8050C-1.5A

MMBT8050W (1.5A) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 5 V Peak Collector Current ICM 1.5 A Total Power Dissipation Ptot 200 mW O Junction Temperature Tj 150 C O Storage Te

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MMBT8050C-1.5A

MMBT8050C/D(1.5A) Features For switching and amplifier applications Especially suitable for AF-Driver stages and low power output stages Absolute maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 6 V Collector Current IC 1.5 A Power Dissipation PD 350 mW

Otros transistores... 2SD882SQ-Q, 2SD882SQ-R, 2SD965ASQ-Q, 2SD965ASQ-R, 2SD965ASQ-S, BCX53SQ-10, BCX53SQ-16, MMBT8050-C, S8050, MMBT8050-D, MMBT8050D-1.5A, MMBT8550-C, MMBT8550-D, MMBT9012G, MMBT9012H, MMBT9013-G, MMBT9013-H