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MMBT8550-D . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMBT8550-D
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.35 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 25 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.6 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100(typ) MHz
   Ganancia de corriente contínua (hfe): 160
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de transistor bipolar MMBT8550-D

 

MMBT8550-D Datasheet (PDF)

 ..1. Size:496K  pjsemi
mmbt8550-c mmbt8550-d.pdf

MMBT8550-D
MMBT8550-D

MMBT8550 PNP Transistor FeaturesSOT-23 (TO-236) For Switching and Amplifier Applications. As Complementary Type of the NPN TransistorMMBT8050 is Recommended.1.Base 2.Emitter 3.CollectorAbsolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value UnitCollector Base Voltage -V 40 V CBOCollector Emitter Voltage

 6.1. Size:814K  semtech
mmbt8550c mmbt8550d.pdf

MMBT8550-D
MMBT8550-D

MMBT8550(1.5A) PNP Silicon Epitaxial Planar Transistor For switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. As complementary type the NPN transistor MMBT8050 (1.5A) is recommended. 1.Base 2.Emitter 3.Collector TO-236 Plastic Package OAbsolute Maximum Ratings (T = 25 C) aParameter Symbol Value Unit Collector Bas

 6.2. Size:332K  topdiode
mmbt8550.pdf

MMBT8550-D
MMBT8550-D

Tel/Fax: +86 (0)769 82827329 Skype: topdiodeEmail: info@topdiode.com Website: www.topdiode.comTel/Fax: +86 (0)769 82827329 Skype: topdiodeEmail: info@topdiode.com Website: www.topdiode.com

 6.3. Size:131K  wej
mmbt8550lt1.pdf

MMBT8550-D
MMBT8550-D

RoHS MMBT8550LT1PNP EPITAXIAL SILICON TRANSISTOR SOT-2332W OUTPUT AMPLIFIER OF PORTABLE1RADIOS IN CLASSB PUSH-PULL OPERATION2 Complement to MMPT8050LT11.1.BASE Collector-current:Ic=-500mA 2.EMITTER High Total Power Dissipation:Pc=225mW2.43.COLLECTOR1.3Unit:mmoABSOLUTE MAXIMUM RATINGS (Ta=25 C)Symbol Rating UnitCharacteristicCollector-Base Voltage

 6.4. Size:449K  agertech
mmbt8550c mmbt8550d.pdf

MMBT8550-D
MMBT8550-D

MMBT8550C/DFeatures For switching and amplifier applications Especially suitable for AF-Driver stages and lowpower output stages As complementary type of the NPN transistorMMBT8050C/D is recommendedAbsolute maximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 25 VEmitter Base V

 6.5. Size:857K  pjsemi
mmbt8550c mmbt8550d.pdf

MMBT8550-D
MMBT8550-D

MMBT8550-1.5A PNP Transistor FeaturesSOT-23 (TO-236) For Switching and Amplifier Applications. Especially Suitable for AF-Driver Stages and LowPower Output Stages. As Complementary Type of the NPN TransistorMMBT8050-1.5A is Recommended.1.Base 2.Emitter 3.CollectorMarking: -C: X2-D: Y2Absolute Maximum Ratings Ratings at 25 ambient temperature unless other

Otros transistores... 2SD965ASQ-S , BCX53SQ-10 , BCX53SQ-16 , MMBT8050-C , MMBT8050C-1.5A , MMBT8050-D , MMBT8050D-1.5A , MMBT8550-C , 2SD718 , MMBT9012G , MMBT9012H , MMBT9013-G , MMBT9013-H , MMBT9015-B , MMBT9015-C , MMBT9015-D , MMBTSC1623-L4 .

 

 
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