MMBT8550-D Datasheet. Specs and Replacement
Type Designator: MMBT8550-D 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 typ MHz
Forward Current Transfer Ratio (hFE), MIN: 160
Package: SOT23
MMBT8550-D Substitution
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MMBT8550-D datasheet
MMBT8550 PNP Transistor Features SOT-23 (TO-236) For Switching and Amplifier Applications. As Complementary Type of the NPN Transistor MMBT8050 is Recommended. 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage -V 40 V CBO Collector Emitter Voltage ... See More ⇒
MMBT8550(1.5A) PNP Silicon Epitaxial Planar Transistor For switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. As complementary type the NPN transistor MMBT8050 (1.5A) is recommended. 1.Base 2.Emitter 3.Collector TO-236 Plastic Package O Absolute Maximum Ratings (T = 25 C) a Parameter Symbol Value Unit Collector Bas... See More ⇒
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RoHS MMBT8550LT1 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 2W OUTPUT AMPLIFIER OF PORTABLE 1 RADIOS IN CLASS B PUSH-PULL OPERATION 2 Complement to MMPT8050LT1 1. 1.BASE Collector-current Ic=-500mA 2.EMITTER High Total Power Dissipation Pc=225mW 2.4 3.COLLECTOR 1.3 Unit mm o ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol Rating Unit Characteristic Collector-Base Voltage ... See More ⇒
Detailed specifications: 2SD965ASQ-S, BCX53SQ-10, BCX53SQ-16, MMBT8050-C, MMBT8050C-1.5A, MMBT8050-D, MMBT8050D-1.5A, MMBT8550-C, 13007, MMBT9012G, MMBT9012H, MMBT9013-G, MMBT9013-H, MMBT9015-B, MMBT9015-C, MMBT9015-D, MMBTSC1623-L4
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History: BCX53SQ-10 | C8050D | MSB92WT1G
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