MMBTSC1623-L4 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBTSC1623-L4
Código: L4
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250(typ) MHz
Ganancia de corriente contínua (hfe): 90
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar MMBTSC1623-L4
MMBTSC1623-L4 Datasheet (PDF)
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mmbtsc3356.pdf
MMBTSC3356 NPN Silicon Epitaxial Planar Transistorfor microwave low noise amplifier at VHF,UHF and CATV bandThe transistor is subdivided into threegroups, Q, R and S, according to its DCcurrent gain.1.Base 2.Emitter 3.CollectorHFE MARKINGSOT-23 Plastic PackageQ R23R R24S R25OAbsolute Maximum Ratings (T = 25 C)aParameter Symbol Value UnitCollector Base Voltage VCB
mmbtsc2712.pdf
MMBTSC2712 NPN Silicon Epitaxial Planar Transistor for audio frequency general purpose amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. Features High voltage and high current: VCEO=50V, IC=150mA(max)1.Base 2.Emitter 3.Collector High hFE: hFE=70~700SOT-23 Plastic Package Low noise: NF=1dB(typ.), 10dB
Otros transistores... BC507FA , BC507FB , BC508 , BC508A , BC508B , BC508C , BC508F , BC508FA , A1941 , BC508FC , BC509 , BC509B , BC509C , BC509F , BC509FB , BC509FC , BC510 .
Liste
Recientemente añadidas las descripciónes de los transistores:
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