Справочник транзисторов. MMBTSC1623-L4

 

Биполярный транзистор MMBTSC1623-L4 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MMBTSC1623-L4
   Маркировка: L4
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.2 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 250(typ) MHz
   Статический коэффициент передачи тока (hfe): 90
   Корпус транзистора: SOT23

 Аналоги (замена) для MMBTSC1623-L4

 

 

MMBTSC1623-L4 Datasheet (PDF)

 ..1. Size:731K  pjsemi
mmbtsc1623-l4 mmbtsc1623-l5 mmbtsc1623-l6 mmbtsc1623-l7.pdf

MMBTSC1623-L4
MMBTSC1623-L4

MMBTSC1623 NPN Transistor Features SOT-23 High DC Current gain. High voltage1.Base 2.Emitter 3.CollectorMarking Code: L4: L4. L5: L5. L6: L6. L7: L7. Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 60 V CBOCollector Emitter Voltage V 50 V CEOEmitter Base V

 4.1. Size:206K  semtech
mmbtsc1623o mmbtsc1623y mmbtsc1623g mmbtsc1623l.pdf

MMBTSC1623-L4
MMBTSC1623-L4

MMBTSC1623 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain SOT-23 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 50 VEmitter Base Voltage VEBO 5 V

 7.1. Size:141K  semtech
mmbtsc1815o mmbtsc1815y mmbtsc1815g mmbtsc1815l.pdf

MMBTSC1623-L4
MMBTSC1623-L4

MMBTSC1815 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA1015 is recommended. TO-236 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO

 8.1. Size:282K  semtech
mmbtsc4098w.pdf

MMBTSC1623-L4
MMBTSC1623-L4

MMBTSC4098W NPN Silicon Epitaxial Planar Transistor for AM/FM amplifier and local oscillator of FM/VHF tuner applications. OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 25 VEmitter Base Voltage VEBO 5 VCollector Current IC 50 mA Power Dissipation Ptot 200 mWOJunction Temperature Tj 150 C

 8.2. Size:207K  semtech
mmbtsc3356q mmbtsc3356r mmbtsc3356s.pdf

MMBTSC1623-L4
MMBTSC1623-L4

MMBTSC3356 NPN Silicon Epitaxial Planar Transistor for microwave low noise amplifier at VHF, UHF and CATV band The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. SOT-23 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 20 VCollector Emitter Voltage VCEO 12 VEmitter Base V

 8.3. Size:130K  semtech
mmbtsc945r mmbtsc945o mmbtsc945y mmbtsc945p mmbtsc945l.pdf

MMBTSC1623-L4
MMBTSC1623-L4

MMBTSC945 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA733 is recommended. TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO

 8.4. Size:710K  pjsemi
mmbtsc945-l mmbtsc945-h.pdf

MMBTSC1623-L4
MMBTSC1623-L4

MMBTSC945 NPN Transistor SOT-23 Features (TO-236) Excellent hFE Linearity Low noise1.Base 2.Emitter 3.CollectorMarking: CRAbsolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 60 V CBOCollector Emitter Voltage V 50 V CEOEmitter Base Voltage V 5 V EBOCollector Curr

 8.5. Size:508K  pjsemi
mmbtsc3875-o mmbtsc3875-y mmbtsc3875-g mmbtsc3875-l.pdf

MMBTSC1623-L4
MMBTSC1623-L4

MMBTSC3875NPN Transistor Features For Switching and AF Amplifier Applications.SOT-23 As Complementary Type of the PNP Transistor (TO-236) MMBTSA1504 is Recommended.1.Base 2.Emitter 3.CollectorMarking:MMBTSC3875O:ALOMMBTSC3875Y:ALYMMBTSC3875G:ALGMMBTSC3875L:ALLAbsolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter

 8.6. Size:544K  cn cbi
mmbtsc2412.pdf

MMBTSC1623-L4
MMBTSC1623-L4

MMBTSC2412 TRANSISTOR (NPN) FEATURES SOT-23 Low Cob ,Cob = 2.0 pF (Typ). 1BASE 2EMITTER 3COLLECTOR MARKING : BR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipa

 8.7. Size:1050K  cn cbi
mmbtsc4081w.pdf

MMBTSC1623-L4
MMBTSC1623-L4

NPN Silicon Epitaxial Planar TransistorThe transistor is subdivided into three groups Q, R and S according to its DC current gain. OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 50 VEmitter Base Voltage VEBO 7 VCollector Current IC 150 mAPower Dissipation Ptot 200 mW OJunction Temperature Tj

 8.8. Size:203K  cn cbi
mmbtsc3356.pdf

MMBTSC1623-L4
MMBTSC1623-L4

MMBTSC3356 NPN Silicon Epitaxial Planar Transistorfor microwave low noise amplifier at VHF,UHF and CATV bandThe transistor is subdivided into threegroups, Q, R and S, according to its DCcurrent gain.1.Base 2.Emitter 3.CollectorHFE MARKINGSOT-23 Plastic PackageQ R23R R24S R25OAbsolute Maximum Ratings (T = 25 C)aParameter Symbol Value UnitCollector Base Voltage VCB

 8.9. Size:554K  cn cbi
mmbtsc2712.pdf

MMBTSC1623-L4
MMBTSC1623-L4

MMBTSC2712 NPN Silicon Epitaxial Planar Transistor for audio frequency general purpose amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. Features High voltage and high current: VCEO=50V, IC=150mA(max)1.Base 2.Emitter 3.Collector High hFE: hFE=70~700SOT-23 Plastic Package Low noise: NF=1dB(typ.), 10dB

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