2SA1213Y Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SA1213Y

Código: NY

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.5 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 120 typ MHz

Capacitancia de salida (Cc): 40 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: SC62

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2SA1213Y datasheet

 ..1. Size:195K  toshiba
2sa1213o 2sa1213y.pdf pdf_icon

2SA1213Y

2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = -0.5 V (max) (IC = -1 A) High speed switching time tstg = 1.0 s (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SC2873 Absolut

 0.1. Size:143K  comchip
2sa1213y-g.pdf pdf_icon

2SA1213Y

General Purpose Transistor 2SA1213-G Series (PNP) RoHS Device Features 1 Base -Small flat package. 2 Collector SOT-89-3L 3 Emitter -Power amplifier and switching -applications. 0.181(4.60) 0.173(4.40) -Low saturation voltage. 0.061(1.55) REF. -High speed switching time. 0.102(2.60) 0.167(4.25) 0.091(2.30) 0.155(3.94) 1 2 3 Maximum Ratings (at TA=25 C unless other

 7.1. Size:223K  toshiba
2sa1213.pdf pdf_icon

2SA1213Y

2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = -0.5 V (max) (I C = -1 A) High speed switching time t = 1.0 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SC2873 Max

 7.2. Size:999K  mcc
2sa1213-o 2sa1213-y.pdf pdf_icon

2SA1213Y

2SA1213-O/2SA1213-Y Electrical Characteristics @ 25 C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions V(BR)CBO -50 IC=-100 A, IE=0 Collector-Base Breakdown Voltage V V(BR)CEO -50 IC=-10mA, IB=0 Collector-Emitter Breakdown Voltag V V(BR)EBO -5 IE=-100 A, IC=0 Emitter-Base Breakdown Voltage V ICBO VCB=-50V, IE=0 Collector-Base Cutoff Current -0.1 A IEB

Otros transistores... MMDT2907ASG, MMDT3904SG, MMDT3906SG, MMBT3904H, MMBT3906H, 2SA1163BL, 2SA1163GR, 2SA1213O, BC546, 2SA1362GR, 2SA1586-GR, 2SA1586-O, 2SA1586-Y, 2SA1587BL, 2SA1587GR, 2SA1588-GR, 2SA1588-O