2SA1362GR . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1362GR
Código: AE
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 15 V
Tensión colector-emisor (Vce): 15 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 120(typ) MHz
Capacitancia de salida (Cc): 13 pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: SC59
Búsqueda de reemplazo de transistor bipolar 2SA1362GR
2SA1362GR Datasheet (PDF)
2sa1362y 2sa1362gr.pdf
2SA1362 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1362 Low Frequency Power Amplifier Applications Unit: mmPower Switching Applications High DC current gain: hFE = 120 to 400 Low saturation voltage: VCE (sat) = -0.2 V (max) (IC = -400 mA, IB = -8 mA) Suitable for driver stage of small motor Small package Absolute Maximum Ratings (Ta = 2
2sa1362.pdf
2SA1362 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1362 Low Frequency Power Amplifier Applications Unit: mmPower Switching Applications High DC current gain: hFE = 120~400 Low saturation voltage: VCE (sat) = -0.2 V (max) (IC = -400 mA, IB = -8 mA) Suitable for driver stage of small motor Small package Absolute Maximum Ratings (Ta = 25
2sa1362.pdf
SMD Type orSMD Type TransistICsPNP Transistors 2SA1362SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13FeaturesSuitable for driver stage of small motor.Small package.1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -15 VCollector-emitter voltage VCEO
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: CSB1181
History: CSB1181
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050