2SA1362GR - параметры, поиск аналогов, даташиты транзистора

2SA1362GR Datasheet (PDF)

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2SA1362 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1362 Low Frequency Power Amplifier Applications Unit: mmPower Switching Applications High DC current gain: hFE = 120 to 400 Low saturation voltage: VCE (sat) = -0.2 V (max) (IC = -400 mA, IB = -8 mA) Suitable for driver stage of small motor Small package Absolute Maximum Ratings (Ta = 2

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7.1. Size:186K toshiba
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2SA1362 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1362 Low Frequency Power Amplifier Applications Unit: mmPower Switching Applications High DC current gain: hFE = 120~400 Low saturation voltage: VCE (sat) = -0.2 V (max) (IC = -400 mA, IB = -8 mA) Suitable for driver stage of small motor Small package Absolute Maximum Ratings (Ta = 25

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SMD Type orSMD Type TransistICsPNP Transistors 2SA1362SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13FeaturesSuitable for driver stage of small motor.Small package.1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -15 VCollector-emitter voltage VCEO

Другие транзисторы... MMDT3904SG , MMDT3906SG , MMBT3904H , MMBT3906H , 2SA1163BL , 2SA1163GR , 2SA1213O , 2SA1213Y , 2SC1815 , 2SA1586-GR , 2SA1586-O , 2SA1586-Y , 2SA1587BL , 2SA1587GR , 2SA1588-GR , 2SA1588-O , 2SA1588-Y .