HN1A01FE-GR Todos los transistores

 

HN1A01FE-GR . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HN1A01FE-GR

Código: D1G

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.1 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (ft): 80 MHz

Capacitancia de salida (Cc): 4 pF

Ganancia de corriente contínua (hfe): 200

Paquete / Cubierta: ES6

Búsqueda de reemplazo de transistor bipolar HN1A01FE-GR

 

HN1A01FE-GR Datasheet (PDF)

 ..1. Size:204K  toshiba
hn1a01fe-y hn1a01fe-gr.pdf

HN1A01FE-GR
HN1A01FE-GR

HN1A01FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A01FE Unit: mmAudio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : VCEO = -50V, IC = -150mA (max) High hFE: hFE = 120 to 400 Excellent hFE linearity : hFE (IC = -0.1mA) / hFE (IC = -2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25

 6.1. Size:174K  toshiba
hn1a01fe.pdf

HN1A01FE-GR
HN1A01FE-GR

HN1A01FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A01FE Unit: mmAudio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : VCEO = -50V, IC = -150mA (max) High hFE: hFE = 120~400 Excellent hFE linearity : hFE (IC = -0.1mA) / hFE (IC = -2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25C)

 7.1. Size:228K  toshiba
hn1a01f.pdf

HN1A01FE-GR
HN1A01FE-GR

HN1A01F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A01F Unit: mmAudio-Frequency General-Purpose Amplifier Applications Small package (dual type) High voltage and high current : VCEO = -50 V, IC = -150 mA (max) High hFE: hFE = 120~400 Excellent hFE linearity : hFE (IC = -0.1 mA) / hFE (IC = -2 mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25

 7.2. Size:242K  toshiba
hn1a01fu.pdf

HN1A01FE-GR
HN1A01FE-GR

HN1A01FU TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A01FU Unit: mmAudio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : V =-50V, I =-150mA (max) CEO C High h : h = 120~400 FE FE Excellent h linearity FE: h (I =-0.1mA) / h (I =-2mA) = 0.95 (typ.) FE C FE CAbsolute Maximum Ratings

 7.3. Size:811K  kexin
hn1a01fu.pdf

HN1A01FE-GR
HN1A01FE-GR

SMD Type Transistors PNP TransistorsHN1A01FU (KN1A01FU ) Features High voltage and high current High hFE: hFE = 120~400 Excellent hFE linearity Small package (Dual type) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Collector

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