HN1A01FE-GR Todos los transistores

 

HN1A01FE-GR Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HN1A01FE-GR
   Código: D1G
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.1 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.15 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 80 MHz
   Capacitancia de salida (Cc): 4 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: ES6
 

 Búsqueda de reemplazo de HN1A01FE-GR

   - Selección ⓘ de transistores por parámetros

 

HN1A01FE-GR PDF detailed specifications

 ..1. Size:204K  toshiba
 hn1a01fe-y hn1a01fe-gr.pdf pdf_icon

HN1A01FE-GR

... See More ⇒

 6.1. Size:174K  toshiba
 hn1a01fe.pdf pdf_icon

HN1A01FE-GR

HN1A01FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A01FE Unit mm Audio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current VCEO = -50V, IC = -150mA (max) High hFE hFE = 120 400 Excellent hFE linearity hFE (IC = -0.1mA) / hFE (IC = -2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25 C)... See More ⇒

 7.1. Size:228K  toshiba
 hn1a01f.pdf pdf_icon

HN1A01FE-GR

HN1A01F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A01F Unit mm Audio-Frequency General-Purpose Amplifier Applications Small package (dual type) High voltage and high current VCEO = -50 V, IC = -150 mA (max) High hFE hFE = 120 400 Excellent hFE linearity hFE (IC = -0.1 mA) / hFE (IC = -2 mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25... See More ⇒

 7.2. Size:242K  toshiba
 hn1a01fu.pdf pdf_icon

HN1A01FE-GR

HN1A01FU TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A01FU Unit mm Audio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current V =-50V, I =-150mA (max) CEO C High h h = 120 400 FE FE Excellent h linearity FE h (I =-0.1mA) / h (I =-2mA) = 0.95 (typ.) FE C FE C Absolute Maximum Ratings ... See More ⇒

SHOW MORE

Otros transistores... 2SC4213-A , 2SC4213-B , 2SC5066O , 2SC5066Y , 2SC5084O , 2SC5084Y , 2SC6026MFV-GR , 2SC6026MFV-Y , 2SC2240 , HN1A01FE-Y , HN1B04FE-GR , HN1B04FE-Y , 2N25550 , 2N25551 , 2SA1015G , 2SA1015O , 2SA1015Y .

 

 
Back to Top

 


 
.