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HN1A01FE-GR . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HN1A01FE-GR
   Código: D1G
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.1 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.15 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 80 MHz
   Capacitancia de salida (Cc): 4 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: ES6
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HN1A01FE-GR Datasheet (PDF)

 ..1. Size:204K  toshiba
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HN1A01FE-GR
HN1A01FE-GR

HN1A01FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A01FE Unit: mmAudio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : VCEO = -50V, IC = -150mA (max) High hFE: hFE = 120 to 400 Excellent hFE linearity : hFE (IC = -0.1mA) / hFE (IC = -2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25

 6.1. Size:174K  toshiba
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HN1A01FE-GR
HN1A01FE-GR

HN1A01FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A01FE Unit: mmAudio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : VCEO = -50V, IC = -150mA (max) High hFE: hFE = 120~400 Excellent hFE linearity : hFE (IC = -0.1mA) / hFE (IC = -2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25C)

 7.1. Size:228K  toshiba
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HN1A01FE-GR
HN1A01FE-GR

HN1A01F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A01F Unit: mmAudio-Frequency General-Purpose Amplifier Applications Small package (dual type) High voltage and high current : VCEO = -50 V, IC = -150 mA (max) High hFE: hFE = 120~400 Excellent hFE linearity : hFE (IC = -0.1 mA) / hFE (IC = -2 mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25

 7.2. Size:242K  toshiba
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HN1A01FE-GR
HN1A01FE-GR

HN1A01FU TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A01FU Unit: mmAudio Frequency General Purpose Amplifier Applications Small package (Dual type) High voltage and high current : V =-50V, I =-150mA (max) CEO C High h : h = 120~400 FE FE Excellent h linearity FE: h (I =-0.1mA) / h (I =-2mA) = 0.95 (typ.) FE C FE CAbsolute Maximum Ratings

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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