MMBTSA733R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBTSA733R
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 180(typ) MHz
Capacitancia de salida (Cc): 2.8 pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO236
Búsqueda de reemplazo de transistor bipolar MMBTSA733R
MMBTSA733R Datasheet (PDF)
mmbtsa733r mmbtsa733o mmbtsa733y mmbtsa733p mmbtsa733l.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
MMBTSA733 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. As complementary type the NPN transistor MMBTSC945 is recommended. TO-236 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO
mmbtsa1504o mmbtsa1504y mmbtsa1504g.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
MMBTSA1504 PNP Silicon Epitaxial Planar Transistor For switching and general purpose applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 50 VCollector Emitter Voltage -VCEO 50 VEmitter Base Voltage -VEBO
mmbtsa812o mmbtsa812y mmbtsa812g mmbtsa812l.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
MMBTSA812 PNP Silicon Epitaxial Planar Transistor for audio frequency, general purpose amplifier. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. 1.Base 2.Emitter 3.CollectorSOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 5
mmbtsa1576w.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
PNP Silicon Epitaxial Planar TransistorThe transistor is subdivided into three groups Q, R and S according to its DC current gain. OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 60 VCollector Emitter Voltage -VCEO 50 VEmitter Base Voltage -VEBO 6 VCollector Current -IC 150 mAPower Dissipation Ptot 200 mW OJunction Temperatur
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: BSS82BL
History: BSS82BL
![MMBTSA733R](https://alltransistors.com/images/us.png)
![MMBTSA733R](https://alltransistors.com/images/es.png)
![MMBTSA733R](https://alltransistors.com/images/ru.png)
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: C4977 | BP4N45S | BP4N38S | BP18N98S | BP15N98T | BM8N08A | BM3P03A | BM1P40A | BM05P06B | BM05P06A | BM05N06B | BM03P05 | BM03N05 | BL15P15A | BL15N15A | BL10P15A | BL10N15A | BA16P25A | BA16N25A | BA15P26B | BA15P26A