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2SA1272 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SA1272
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 35 V
   Corriente del colector DC máxima (Ic): 0.8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 120 MHz
   Capacitancia de salida (Cc): 12 pF
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: TO92MOD

 Búsqueda de reemplazo de transistor bipolar 2SA1272

 

2SA1272 Datasheet (PDF)

 8.2. Size:144K  jmnic
2sa1279.pdf

2SA1272 2SA1272

JMnic Product Specification Silicon PNP Power Transistors 2SA1279 DESCRIPTION With TO-220F package Low collector saturation voltage APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collec

 8.3. Size:240K  jmnic
2sa1276.pdf

2SA1272 2SA1272

JMnic Product Specification Silicon PNP Power Transistors 2SA1276 DESCRIPTION With TO-220 package Complement to type 2SC3230 Good linearity of hFE APPLICATIONS General purpose applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL P

 8.4. Size:39K  kec
2sa1270.pdf

2SA1272

 8.5. Size:39K  kec
2sa1271.pdf

2SA1272

 8.6. Size:34K  kec
2sa1273.pdf

2SA1272

 8.7. Size:174K  inchange semiconductor
2sa1279.pdf

2SA1272 2SA1272

isc Silicon PNP Power Transistor 2SA1279DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -60V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -60

 8.8. Size:219K  inchange semiconductor
2sa1276.pdf

2SA1272 2SA1272

isc Silicon PNP Power Transistor 2SA1276DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -30V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3230Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Col

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N1463 | 2N1481

 

 
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History: 2N1463 | 2N1481

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