MMBTSC945R Datasheet. Equivalente

 ..1. Size:130K  semtech
 mmbtsc945r mmbtsc945o mmbtsc945y mmbtsc945p mmbtsc945l.pdf

MMBTSC945 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA733 is recommended. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO

 5.1. Size:710K  pjsemi
 mmbtsc945-l mmbtsc945-h.pdf

MMBTSC945 NPN Transistor SOT-23 Features (TO-236) Excellent hFE Linearity Low noise 1.Base 2.Emitter 3.Collector Marking CR Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 60 V CBO Collector Emitter Voltage V 50 V CEO Emitter Base Voltage V 5 V EBO Collector Curr

 8.1. Size:282K  semtech
 mmbtsc4098w.pdf

MMBTSC4098W NPN Silicon Epitaxial Planar Transistor for AM/FM amplifier and local oscillator of FM/VHF tuner applications. O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 5 V Collector Current IC 50 mA Power Dissipation Ptot 200 mW O Junction Temperature Tj 150 C

 8.2. Size:141K  semtech
 mmbtsc1815o mmbtsc1815y mmbtsc1815g mmbtsc1815l.pdf

MMBTSC1815 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA1015 is recommended. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO

 8.3. Size:206K  semtech
 mmbtsc1623o mmbtsc1623y mmbtsc1623g mmbtsc1623l.pdf

MMBTSC1623 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain SOT-23 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 5 V

 8.4. Size:207K  semtech
 mmbtsc3356q mmbtsc3356r mmbtsc3356s.pdf

MMBTSC3356 NPN Silicon Epitaxial Planar Transistor for microwave low noise amplifier at VHF, UHF and CATV band The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. SOT-23 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 20 V Collector Emitter Voltage VCEO 12 V Emitter Base V

 8.5. Size:731K  pjsemi
 mmbtsc1623-l4 mmbtsc1623-l5 mmbtsc1623-l6 mmbtsc1623-l7.pdf

MMBTSC1623 NPN Transistor Features SOT-23 High DC Current gain. High voltage 1.Base 2.Emitter 3.Collector Marking Code L4 L4. L5 L5. L6 L6. L7 L7. Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 60 V CBO Collector Emitter Voltage V 50 V CEO Emitter Base V

 8.6. Size:508K  pjsemi
 mmbtsc3875-o mmbtsc3875-y mmbtsc3875-g mmbtsc3875-l.pdf

MMBTSC3875 NPN Transistor Features For Switching and AF Amplifier Applications. SOT-23 As Complementary Type of the PNP Transistor (TO-236) MMBTSA1504 is Recommended. 1.Base 2.Emitter 3.Collector Marking MMBTSC3875O ALO MMBTSC3875Y ALY MMBTSC3875G ALG MMBTSC3875L ALL Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter

 8.7. Size:544K  cn cbi
 mmbtsc2412.pdf

MMBTSC2412 TRANSISTOR (NPN) FEATURES SOT-23 Low Cob ,Cob = 2.0 pF (Typ). 1 BASE 2 EMITTER 3 COLLECTOR MARKING BR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipa

 8.8. Size:1050K  cn cbi
 mmbtsc4081w.pdf

NPN Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups Q, R and S according to its DC current gain. O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 7 V Collector Current IC 150 mA Power Dissipation Ptot 200 mW O Junction Temperature Tj

 8.9. Size:203K  cn cbi
 mmbtsc3356.pdf

MMBTSC3356 NPN Silicon Epitaxial Planar Transistor for microwave low noise amplifier at VHF, UHF and CATV band The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. 1.Base 2.Emitter 3.Collector HFE MARKING SOT-23 Plastic Package Q R23 R R24 S R25 O Absolute Maximum Ratings (T = 25 C) a Parameter Symbol Value Unit Collector Base Voltage VCB

 8.10. Size:554K  cn cbi
 mmbtsc2712.pdf

MMBTSC2712 NPN Silicon Epitaxial Planar Transistor for audio frequency general purpose amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. Features High voltage and high current VCEO=50V, IC=150mA(max) 1.Base 2.Emitter 3.Collector High hFE hFE=70 700 SOT-23 Plastic Package Low noise NF=1dB(typ.), 10dB