ST2SD1664U-Q Todos los transistores

 

ST2SD1664U-Q . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ST2SD1664U-Q
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.5 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 32 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 150(typ) MHz
   Capacitancia de salida (Cc): 15 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: SOT89
     - Selección de transistores por parámetros

 

ST2SD1664U-Q Datasheet (PDF)

 ..1. Size:391K  semtech
 st2sd1664u-p st2sd1664u-q st2sd1664u-r.pdf pdf_icon

ST2SD1664U-Q

ST 2SD1664U NPN SILICON EPITAXIAL MEDIUM POWER TRANSISTOR Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 32 VEmitter Base Voltage VEBO 5 VCollector Current - DC IC 1 A Collector Current - Pulse 1) ICP 2 A 0.5 Ptot W Total Power Dissipation2 2) Junction Temperature TJ 150 Storage Te

 4.1. Size:560K  semtech
 st2sd1664u.pdf pdf_icon

ST2SD1664U-Q

ST 2SD1664U NPN SILICON EPITAXIAL MEDIUM POWER TRANSISTOR Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 32 VEmitter Base Voltage VEBO 5 VCollector Current - DC IC 1 A Collector Current - Pulse 1) ICP 2 A 0.5 Ptot W Total Power Dissipation2 2) Junction Temperature TJ 150 Storage Te

 7.1. Size:350K  semtech
 st2sd1691t.pdf pdf_icon

ST2SD1664U-Q

ST 2SD1691T NPN Silicon Epitaxial Power Transistor For Low-Frequencey Power Amplifiers and Mid-Speed Switching The transistor is subdivided into three groups, M, L and K, according to its DC-DC current gain. ECBTO-126 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Symbol Value UnitParameter VCBO 60 VCollector to Base Voltage VCEO 60 VCollector to Emitter

 8.1. Size:551K  semtech
 st2sd1760u.pdf pdf_icon

ST2SD1664U-Q

ST 2SD1760U NPN Silicon Epitaxial Planar Transistor Power Transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 45 VEmitter Base Voltage VEBO 5 VCollector Current - DC IC 3 A Collector Current - Pulse 1) ICP 4.5 PC 1 WCollector Power Dissipation Junction Temperature TJ 150 Stor

MOSTRAR MÁS

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: SRC1204E | 2N2672A | BD355C | 2SA1371F | 2SC5824 | RN1912AFS | TI618

 

 
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