MRF10070 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF10070
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 438 W
Tensión colector-base (Vcb): 65 V
Tensión colector-emisor (Vce): 65 V
Tensión emisor-base (Veb): 3.5 V
Corriente del colector DC máxima (Ic): 8.8 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1100 MHz
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: CASE376C-01
Búsqueda de reemplazo de transistor bipolar MRF10070
MRF10070 Datasheet (PDF)
mrf10070.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF10070/DThe RF LineMicrowave PulseMRF10070Power TransistorDesigned for 10251150 MHz pulse common base amplifier applicationssuch as TCAS, TACAN and ModeS transmitters. Guaranteed Performance @ 1090 MHzOutput Power = 70 Watts Peak70 W (PEAK)Gain = 9.0 dB Min1025 1150 MHzMICROWAVE POWER 100%
mrf1004m.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1004MA/DThe RF LineMicrowave PulseMRF1004MAPower TransistorsDesigned for Class B and C common base amplifier applications in short andlong pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 35 VdcOutput Power = 4.0 Watts Peak4.0 W, 9601215 MHzMinimum Gain = 10 dBMICROWAV
mrf1000m.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1000MA/DThe RF LineMicrowave PulseMRF1000MAPower TransistorsMRF1000MB. . . designed for Class A and AB common emitter amplifier applications in thelowpower stages of IFF, DME, TACAN, radar transmitters, and CW systems. Guaranteed Performance @ 1090 MHz, 18 Vdc Class AOutput Power = 0.2 Watt0.7 W, 96
mrf1002ma mrf1002mb.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1002MA/DThe RF LineMicrowave PulseMRF1002MAPower TransistorsMRF1002MB. . . designed for Class B and C common base amplifier applications in shortand long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 35 VdcOutput Power = 2.0 Watts Peak2.0 W (PEAK), 9601215 MHzMinimu
mrf10005.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF10005/DThe RF LineMicrowave Power TransistorMRF10005. . . designed for CW and long pulsed common base amplifier applications,such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at highoverall duty cycles. Guaranteed Performance @ 1.215 GHz, 28 VdcOutput Power = 5.0 Watts CWMinimum Gain = 8.5 d
mrf1004ma.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1004MA/DThe RF LineMicrowave PulseMRF1004MAPower TransistorsDesigned for Class B and C common base amplifier applications in short andlong pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 35 VdcOutput Power = 4.0 Watts Peak4.0 W, 9601215 MHzMinimum Gain = 10 dBMICROWAV
mrf1002m.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1002MA/DThe RF LineMicrowave PulseMRF1002MAPower TransistorsMRF1002MB. . . designed for Class B and C common base amplifier applications in shortand long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 35 VdcOutput Power = 2.0 Watts Peak2.0 W (PEAK), 9601215 MHzMinimu
mrf1000ma mrf1000mb.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1000MA/DThe RF LineMicrowave PulseMRF1000MAPower TransistorsMRF1000MB. . . designed for Class A and AB common emitter amplifier applications in thelowpower stages of IFF, DME, TACAN, radar transmitters, and CW systems. Guaranteed Performance @ 1090 MHz, 18 Vdc Class AOutput Power = 0.2 Watt0.7 W, 96
mrf10031.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF10031/DThe RF LineMicrowave Long PulseMRF10031Power TransistorDesigned for 9601215 MHz long or short pulse common base amplifierapplications such as JTIDS and ModeS transmitters. Guaranteed Performance @ 960 MHz, 36 VdcOutput Power = 30 Watts Peak30 W (PEAK)Minimum Gain = 9.0 dB Min (9.5 dB Typ)960
mrf10005.pdf
MRF10005 Microwave Power Silicon Bipolar Transistor M/A-COM Products Released - Rev. 053007 5.0 W, 9601215 MHz, 28V Features Product Image Guaranteed performance @1.215GHz, 28Vdc Output power: 5.0W CW Minimum gain = 8.5dB, 10.3dB (Typ.) RF performance curves for 28 Vdc and 36 Vdc opera-tion 100% tested for load mismatch at all phase angles with 10:
mrf1000mb.pdf
MRF1000MB Class A, Class AB Microwave Power Silicon NPN Transistor M/A-COM Products Released - Rev. 053007 0.7 W, 9601215 MHz, 18V Features Product Image Guaranteed performance @ 1090 MHz, 18 Vdc Class A Output power: 0.2W Minimum gain: 10dB 100% tested for load mismatch at all phase angles with 10:1 VSWR Industry standard package Nitride
mrf1004mb.pdf
MRF1004MB Microwave Pulse Power Silicon NPN Transistor M/A-COM Products Released - Rev. 07.07 4.0W (peak), 9601215MHz Product Image Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed performance @ 1090 MHz, 35 Vdc Output power = 4.0 W Peak Minimum gain = 10 dB 100% Tested fo
mrf10031.pdf
MRF10031 Microwave Power Silicon NPN Transistor M/A-COM Products Released - Rev. 05.30.07 30W (peak), 9601215MHz, 36V Features Product Image Guaranteed performance @ 960-1215MHz, 36Vdc Output power: 30W peak Minimum gain: 9.0dB min., 9.5dB typ. 100% tested for load mismatch at all phase angles with 10:1 VSWR Hermetically sealed, industry standard pac
mrf1001a.pdf
MRF1001 PCB24140 COMMERCE DRIVEMONTGOMERYVILLE, PA18936-1013PHONE: (215) 631-9840FAX: (215) 631-9855MRF1001ARF & MICROWAVE DISCRETELOW POWER TRANSISTORSFeatures Silicon NPN, To-39 packaged VHF/UHF Transistor Ftau = 3.0 Ghz (typ) @ 300MHz, 14v, 90mA,1. EmitterG2. Base U max = 11.5 dB (typ) @
mrf1004ma.pdf
HG RF POWER TRANSISTORMRF1004MASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDESCRIPTION: PACKAGE STYLE .280 4L STUD The HG MRF1004MA is Designed for Class B and C, TACAN, IFF, and DME Applications up to 1090 MHz. FEATURES: Class B and C Operation Common Base PG = 10 dB at 4.0 W/1090 MHz Omnigold Metalization SystemMAXIMUM RATINGS IC 250 mA VCE
mrf1002ma.pdf
HG RF POWER TRANSISTORMRF1002MASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR. . . designed for Class B and C common base amplifier applications in shortand long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 35 VdcOutput Power = 2.0 Watts PeakMinimum Gain = 10 dB 100% Tested for Load Mismatch at All Phase Angles with 10:1
mrf1002mb.pdf
HG RF POWER TRANSISTORMRF1002MBSemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR. . . designed for Class B and C common base amplifier applications in shortand long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 35 VdcOutput Power = 2.0 Watts PeakMinimum Gain = 10 dB 100% Tested for Load Mismatch at All Phase Angles with 10:1
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
