MRF10070. Аналоги и основные параметры
Наименование производителя: MRF10070
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 438 W
Макcимально допустимое напряжение коллектор-база (Ucb): 65 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 65 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3.5 V
Макcимальный постоянный ток коллектора (Ic): 8.8 A
Предельная температура PN-перехода (Tj): 200 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 1100 MHz
Статический коэффициент передачи тока (hFE): 20
Корпус транзистора: CASE376C-01
Аналоги (замена) для MRF10070
- подборⓘ биполярного транзистора по параметрам
MRF10070 даташит
..1. Size:97K motorola
mrf10070.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10070/D The RF Line Microwave Pulse MRF10070 Power Transistor Designed for 1025 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode S transmitters. Guaranteed Performance @ 1090 MHz Output Power = 70 Watts Peak 70 W (PEAK) Gain = 9.0 dB Min 1025 1150 MHz MICROWAVE POWER 100%
8.1. Size:97K motorola
mrf1004m.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1004MA/D The RF Line Microwave Pulse MRF1004MA Power Transistors Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 4.0 Watts Peak 4.0 W, 960 1215 MHz Minimum Gain = 10 dB MICROWAV
8.2. Size:108K motorola
mrf1000m.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1000MA/D The RF Line Microwave Pulse MRF1000MA Power Transistors MRF1000MB . . . designed for Class A and AB common emitter amplifier applications in the low power stages of IFF, DME, TACAN, radar transmitters, and CW systems. Guaranteed Performance @ 1090 MHz, 18 Vdc Class A Output Power = 0.2 Watt 0.7 W, 96
8.3. Size:109K motorola
mrf1002ma mrf1002mb.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1002MA/D The RF Line Microwave Pulse MRF1002MA Power Transistors MRF1002MB . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak 2.0 W (PEAK), 960 1215 MHz Minimu
8.4. Size:100K motorola
mrf10005.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10005/D The RF Line Microwave Power Transistor MRF10005 . . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high overall duty cycles. Guaranteed Performance @ 1.215 GHz, 28 Vdc Output Power = 5.0 Watts CW Minimum Gain = 8.5 d
8.5. Size:97K motorola
mrf1004ma.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1004MA/D The RF Line Microwave Pulse MRF1004MA Power Transistors Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 4.0 Watts Peak 4.0 W, 960 1215 MHz Minimum Gain = 10 dB MICROWAV
8.6. Size:109K motorola
mrf1002m.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1002MA/D The RF Line Microwave Pulse MRF1002MA Power Transistors MRF1002MB . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak 2.0 W (PEAK), 960 1215 MHz Minimu
8.7. Size:108K motorola
mrf1000ma mrf1000mb.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1000MA/D The RF Line Microwave Pulse MRF1000MA Power Transistors MRF1000MB . . . designed for Class A and AB common emitter amplifier applications in the low power stages of IFF, DME, TACAN, radar transmitters, and CW systems. Guaranteed Performance @ 1090 MHz, 18 Vdc Class A Output Power = 0.2 Watt 0.7 W, 96
8.8. Size:101K motorola
mrf10031.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10031/D The RF Line Microwave Long Pulse MRF10031 Power Transistor Designed for 960 1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode S transmitters. Guaranteed Performance @ 960 MHz, 36 Vdc Output Power = 30 Watts Peak 30 W (PEAK) Minimum Gain = 9.0 dB Min (9.5 dB Typ) 960
8.9. Size:193K macom
mrf10005.pdf 
MRF10005 Microwave Power Silicon Bipolar Transistor M/A-COM Products Released - Rev. 053007 5.0 W, 960 1215 MHz, 28V Features Product Image Guaranteed performance @1.215GHz, 28Vdc Output power 5.0W CW Minimum gain = 8.5dB, 10.3dB (Typ.) RF performance curves for 28 Vdc and 36 Vdc opera- tion 100% tested for load mismatch at all phase angles with 10
8.10. Size:164K macom
mrf1000mb.pdf 
MRF1000MB Class A, Class AB Microwave Power Silicon NPN Transistor M/A-COM Products Released - Rev. 053007 0.7 W, 960 1215 MHz, 18V Features Product Image Guaranteed performance @ 1090 MHz, 18 Vdc Class A Output power 0.2W Minimum gain 10dB 100% tested for load mismatch at all phase angles with 10 1 VSWR Industry standard package Nitride
8.11. Size:164K macom
mrf1004mb.pdf 
MRF1004MB Microwave Pulse Power Silicon NPN Transistor M/A-COM Products Released - Rev. 07.07 4.0W (peak), 960 1215MHz Product Image Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed performance @ 1090 MHz, 35 Vdc Output power = 4.0 W Peak Minimum gain = 10 dB 100% Tested fo
8.12. Size:189K macom
mrf10031.pdf 
MRF10031 Microwave Power Silicon NPN Transistor M/A-COM Products Released - Rev. 05.30.07 30W (peak), 960 1215MHz, 36V Features Product Image Guaranteed performance @ 960-1215MHz, 36Vdc Output power 30W peak Minimum gain 9.0dB min., 9.5dB typ. 100% tested for load mismatch at all phase angles with 10 1 VSWR Hermetically sealed, industry standard pac
8.13. Size:304K microsemi
mrf1001a.pdf 
MRF1001 PCB 24 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE (215) 631-9840 FAX (215) 631-9855 MRF1001A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Silicon NPN, To-39 packaged VHF/UHF Transistor Ftau = 3.0 Ghz (typ) @ 300MHz, 14v, 90mA, 1. Emitter G 2. Base U max = 11.5 dB (typ) @
8.14. Size:241K hgsemi
mrf1004ma.pdf 
HG RF POWER TRANSISTOR MRF1004MA Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR DESCRIPTION PACKAGE STYLE .280 4L STUD The HG MRF1004MA is Designed for Class B and C, TACAN, IFF, and DME Applications up to 1090 MHz. FEATURES Class B and C Operation Common Base PG = 10 dB at 4.0 W/1090 MHz Omnigold Metalization System MAXIMUM RATINGS IC 250 mA VCE
8.15. Size:240K hgsemi
mrf1002ma.pdf 
HG RF POWER TRANSISTOR MRF1002MA Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB 100% Tested for Load Mismatch at All Phase Angles with 10 1
8.16. Size:240K hgsemi
mrf1002mb.pdf 
HG RF POWER TRANSISTOR MRF1002MB Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB 100% Tested for Load Mismatch at All Phase Angles with 10 1
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