MRF15030 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF15030
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 125 W
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1600 MHz
Capacitancia de salida (Cc): 38 pF
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: CASE395C-01
Búsqueda de reemplazo de MRF15030
MRF15030 Datasheet (PDF)
mrf15030.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF15030/DThe RF LineNPN SiliconMRF15030RF Power TransistorDesigned for 26 volts microwave largesignal, common emitter, class A andclass AB linear amplifier applications in industrial and commercial FM/AMequipment operating in the range 14001600 MHz. Specified 26 Volts, 1490 MHz, Class AB Characteristics:
mrf15030rev7.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF15030/DThe RF LineNPN SiliconMRF15030RF Power TransistorDesigned for 26 volts microwave largesignal, common emitter, class A andclass AB linear amplifier applications in industrial and commercial FM/AMequipment operating in the range 14001600 MHz. Specified 26 Volts, 1490 MHz, Class AB Characteristics:
mrf15060rev0.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF15060/DThe RF SubMicron Bipolar LineMRF15060RF Power Bipolar TransistorsMRF15060SDesigned for broadband commercial and industrial applications at frequen-cies from 1400 to 1600 MHz. The high gain and broadband performance ofthese devices makes them ideal for largesignal, commonemitter class A and60 W, 1.
mrf1500.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1500/DThe RF LineMicrowave PulseMRF1500Power TransistorMotorola Preferred DeviceDesigned for 10251150 MHz pulse common base amplifier applicationssuch as DME. Guaranteed Performance @ 1090 MHzOutput Power = 500 Watts Peak500 W (PEAK), 10251150 MHzGain = 5.2 dB MinMICROWAVE POWER 100% Tested
Otros transistores... MRF1031 , MRF1032 , MRF1035MA , MRF1035MB , MRF10500 , MRF10501 , MRF1375 , MRF1500 , D882P , MRF15060 , MRF15060S , MRF15090 , MRF16030 , MRF2000-5L , MRF20030 , MRF20060 , MRF20060S .
History: SDM4013 | IMD9A | KRA221M | 3DD13007MD-F | 3DG117B | DTA114TEFRA
History: SDM4013 | IMD9A | KRA221M | 3DD13007MD-F | 3DG117B | DTA114TEFRA



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