MRF15030
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF15030
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 125
W
Tensión colector-emisor (Vce): 25
V
Tensión emisor-base (Veb): 4
V
Corriente del colector DC máxima (Ic): 10
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1600
MHz
Capacitancia de salida (Cc): 38
pF
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: CASE395C-01
Búsqueda de reemplazo de transistor bipolar MRF15030
MRF15030
Datasheet (PDF)
..1. Size:164K motorola
mrf15030.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF15030/DThe RF LineNPN SiliconMRF15030RF Power TransistorDesigned for 26 volts microwave largesignal, common emitter, class A andclass AB linear amplifier applications in industrial and commercial FM/AMequipment operating in the range 14001600 MHz. Specified 26 Volts, 1490 MHz, Class AB Characteristics:
0.1. Size:158K motorola
mrf15030rev7.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF15030/DThe RF LineNPN SiliconMRF15030RF Power TransistorDesigned for 26 volts microwave largesignal, common emitter, class A andclass AB linear amplifier applications in industrial and commercial FM/AMequipment operating in the range 14001600 MHz. Specified 26 Volts, 1490 MHz, Class AB Characteristics:
8.1. Size:164K motorola
mrf15060rev0.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF15060/DThe RF SubMicron Bipolar LineMRF15060RF Power Bipolar TransistorsMRF15060SDesigned for broadband commercial and industrial applications at frequen-cies from 1400 to 1600 MHz. The high gain and broadband performance ofthese devices makes them ideal for largesignal, commonemitter class A and60 W, 1.
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mrf1500.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1500/DThe RF LineMicrowave PulseMRF1500Power TransistorMotorola Preferred DeviceDesigned for 10251150 MHz pulse common base amplifier applicationssuch as DME. Guaranteed Performance @ 1090 MHzOutput Power = 500 Watts Peak500 W (PEAK), 10251150 MHzGain = 5.2 dB MinMICROWAVE POWER 100% Tested
8.3. Size:164K motorola
mrf15060 mrf15060s.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF15060/DThe RF SubMicron Bipolar LineMRF15060RF Power Bipolar TransistorsMRF15060SDesigned for broadband commercial and industrial applications at frequen-cies from 1400 to 1600 MHz. The high gain and broadband performance ofthese devices makes them ideal for largesignal, commonemitter class A and60 W, 1.
8.4. Size:210K motorola
mrf15090.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF15090/DAdvance InformationThe RF LineMRF15090NPN SiliconRF Power TransistorDesigned for 26 volts microwave largesignal, common emitter, class A andclass AB linear amplifier applications in industrial and commercial FM/AMequipment operating in the range 14001600 MHz.90 W, 1.5 GHz Specified 26 Volts, 1
8.5. Size:206K motorola
mrf1507 mrf1507t1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1507/DThe RF MOSFET LineMRF1507RF Power Field Effect TransistorMRF1507T1NChannel EnhancementMode Lateral MOSFETsThe MRF1507 is designed for broadband commercial and industrialapplications at frequencies to 520 MHz. The high gain and broadband 8 W, 520 MHz, 7.5 Vperformance of this device makes it ideal for
8.6. Size:206K motorola
mrf1507rev1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1507/DThe RF MOSFET LineMRF1507RF Power Field Effect TransistorMRF1507T1NChannel EnhancementMode Lateral MOSFETsThe MRF1507 is designed for broadband commercial and industrialapplications at frequencies to 520 MHz. The high gain and broadband 8 W, 520 MHz, 7.5 Vperformance of this device makes it ideal for
8.7. Size:103K motorola
mrf1500r.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1500/DThe RF LineMicrowave PulseMRF1500Power TransistorMotorola Preferred DeviceDesigned for 10251150 MHz pulse common base amplifier applicationssuch as DME. Guaranteed Performance @ 1090 MHzOutput Power = 500 Watts Peak500 W (PEAK), 10251150 MHzGain = 5.2 dB MinMICROWAVE POWER 100% Tested
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mrf150.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF150/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MRF150Designed primarily for linear largesignal output stages up to 150 MHzfrequency range. Specified 50 Volts, 30 MHz CharacteristicsOutput Power = 150 WattsPower Gain = 17 dB (Typ)150 W, to 150 MHzEfficiency = 45% (T
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mrf150rev8.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF150/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MRF150Designed primarily for linear largesignal output stages up to 150 MHzfrequency range. Specified 50 Volts, 30 MHz CharacteristicsOutput Power = 150 WattsPower Gain = 17 dB (Typ)150 W, to 150 MHzEfficiency = 45% (T
8.10. Size:128K motorola
mrf150re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF150/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MRF150Designed primarily for linear largesignal output stages up to 150 MHzfrequency range. Specified 50 Volts, 30 MHz CharacteristicsOutput Power = 150 WattsPower Gain = 17 dB (Typ)150 W, to 150 MHzEfficiency = 45% (T
Otros transistores... 2N3200
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