Биполярный транзистор MRF15030 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MRF15030
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 125 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
Макcимальный постоянный ток коллектора (Ic): 10 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 1600 MHz
Ёмкость коллекторного перехода (Cc): 38 pf
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора: CASE395C-01
MRF15030 Datasheet (PDF)
mrf15030.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF15030/DThe RF LineNPN SiliconMRF15030RF Power TransistorDesigned for 26 volts microwave largesignal, common emitter, class A andclass AB linear amplifier applications in industrial and commercial FM/AMequipment operating in the range 14001600 MHz. Specified 26 Volts, 1490 MHz, Class AB Characteristics:
mrf15030rev7.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF15030/DThe RF LineNPN SiliconMRF15030RF Power TransistorDesigned for 26 volts microwave largesignal, common emitter, class A andclass AB linear amplifier applications in industrial and commercial FM/AMequipment operating in the range 14001600 MHz. Specified 26 Volts, 1490 MHz, Class AB Characteristics:
mrf15060rev0.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF15060/DThe RF SubMicron Bipolar LineMRF15060RF Power Bipolar TransistorsMRF15060SDesigned for broadband commercial and industrial applications at frequen-cies from 1400 to 1600 MHz. The high gain and broadband performance ofthese devices makes them ideal for largesignal, commonemitter class A and60 W, 1.
mrf1500.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1500/DThe RF LineMicrowave PulseMRF1500Power TransistorMotorola Preferred DeviceDesigned for 10251150 MHz pulse common base amplifier applicationssuch as DME. Guaranteed Performance @ 1090 MHzOutput Power = 500 Watts Peak500 W (PEAK), 10251150 MHzGain = 5.2 dB MinMICROWAVE POWER 100% Tested
mrf15060 mrf15060s.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF15060/DThe RF SubMicron Bipolar LineMRF15060RF Power Bipolar TransistorsMRF15060SDesigned for broadband commercial and industrial applications at frequen-cies from 1400 to 1600 MHz. The high gain and broadband performance ofthese devices makes them ideal for largesignal, commonemitter class A and60 W, 1.
mrf15090.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF15090/DAdvance InformationThe RF LineMRF15090NPN SiliconRF Power TransistorDesigned for 26 volts microwave largesignal, common emitter, class A andclass AB linear amplifier applications in industrial and commercial FM/AMequipment operating in the range 14001600 MHz.90 W, 1.5 GHz Specified 26 Volts, 1
mrf1507 mrf1507t1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1507/DThe RF MOSFET LineMRF1507RF Power Field Effect TransistorMRF1507T1NChannel EnhancementMode Lateral MOSFETsThe MRF1507 is designed for broadband commercial and industrialapplications at frequencies to 520 MHz. The high gain and broadband 8 W, 520 MHz, 7.5 Vperformance of this device makes it ideal for
mrf1507rev1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1507/DThe RF MOSFET LineMRF1507RF Power Field Effect TransistorMRF1507T1NChannel EnhancementMode Lateral MOSFETsThe MRF1507 is designed for broadband commercial and industrialapplications at frequencies to 520 MHz. The high gain and broadband 8 W, 520 MHz, 7.5 Vperformance of this device makes it ideal for
mrf1500r.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1500/DThe RF LineMicrowave PulseMRF1500Power TransistorMotorola Preferred DeviceDesigned for 10251150 MHz pulse common base amplifier applicationssuch as DME. Guaranteed Performance @ 1090 MHzOutput Power = 500 Watts Peak500 W (PEAK), 10251150 MHzGain = 5.2 dB MinMICROWAVE POWER 100% Tested
mrf150.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF150/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MRF150Designed primarily for linear largesignal output stages up to 150 MHzfrequency range. Specified 50 Volts, 30 MHz CharacteristicsOutput Power = 150 WattsPower Gain = 17 dB (Typ)150 W, to 150 MHzEfficiency = 45% (T
mrf150rev8.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF150/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MRF150Designed primarily for linear largesignal output stages up to 150 MHzfrequency range. Specified 50 Volts, 30 MHz CharacteristicsOutput Power = 150 WattsPower Gain = 17 dB (Typ)150 W, to 150 MHzEfficiency = 45% (T
mrf150re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF150/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MRF150Designed primarily for linear largesignal output stages up to 150 MHzfrequency range. Specified 50 Volts, 30 MHz CharacteristicsOutput Power = 150 WattsPower Gain = 17 dB (Typ)150 W, to 150 MHzEfficiency = 45% (T
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