MRF2947RAT2 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MRF2947RAT2

Código: XR

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.188 W

Tensión colector-base (Vcb): 20 V

Tensión colector-emisor (Vce): 10 V

Tensión emisor-base (Veb): 1.5 V

Corriente del colector DC máxima (Ic): 0.05 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 9000 MHz

Capacitancia de salida (Cc): 0.42 pF

Ganancia de corriente contínua (hFE): 75

Encapsulados: SOT363

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MRF2947RAT2 datasheet

 ..1. Size:181K  motorola
 mrf2947at1 mrf2947at2 mrf2947rat1 mrf2947rat2.pdf pdf_icon

MRF2947RAT2

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF2947/D The RF Line NPN Silicon MRF2947AT1,T2 MRF2947RAT1,T2 Low Noise Transistors Motorola s MRF2947 device contains two high performance, low noise NPN silicon bipolar transistors. This device has two 941 die housed in the high performance six leaded SC 70ML package; yielding a 9 GHz current gain bandwidth prod

 6.1. Size:181K  motorola
 mrf2947rev0.pdf pdf_icon

MRF2947RAT2

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF2947/D The RF Line NPN Silicon MRF2947AT1,T2 MRF2947RAT1,T2 Low Noise Transistors Motorola s MRF2947 device contains two high performance, low noise NPN silicon bipolar transistors. This device has two 941 die housed in the high performance six leaded SC 70ML package; yielding a 9 GHz current gain bandwidth prod

Otros transistores... MRF16030, MRF2000-5L, MRF20030, MRF20060, MRF20060S, MRF2947AT1, MRF2947AT2, MRF2947RAT1, S9018, MRF3094, MRF3095, MRF3096, MRF3104, MRF3105, MRF3106, MRF338, MRF4427R2