MRF2947RAT2 Specs and Replacement
Type Designator: MRF2947RAT2
SMD Transistor Code: XR
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.188 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 1.5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 9000 MHz
Collector Capacitance (Cc): 0.42 pF
Forward Current Transfer Ratio (hFE), MIN: 75
Package: SOT363
MRF2947RAT2 Substitution
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MRF2947RAT2 datasheet
mrf2947at1 mrf2947at2 mrf2947rat1 mrf2947rat2.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF2947/D The RF Line NPN Silicon MRF2947AT1,T2 MRF2947RAT1,T2 Low Noise Transistors Motorola s MRF2947 device contains two high performance, low noise NPN silicon bipolar transistors. This device has two 941 die housed in the high performance six leaded SC 70ML package; yielding a 9 GHz current gain bandwidth prod... See More ⇒
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF2947/D The RF Line NPN Silicon MRF2947AT1,T2 MRF2947RAT1,T2 Low Noise Transistors Motorola s MRF2947 device contains two high performance, low noise NPN silicon bipolar transistors. This device has two 941 die housed in the high performance six leaded SC 70ML package; yielding a 9 GHz current gain bandwidth prod... See More ⇒
Detailed specifications: MRF16030, MRF2000-5L, MRF20030, MRF20060, MRF20060S, MRF2947AT1, MRF2947AT2, MRF2947RAT1, S9018, MRF3094, MRF3095, MRF3096, MRF3104, MRF3105, MRF3106, MRF338, MRF4427R2
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