MRF3104 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF3104/D The RF Line MRF3104 Microwave Linear MRF3105 Power Transistors MRF3106 Designed for Class A, Common Emitter Linear Power Amplifiers. Specified 20 Volt, 1.6 GHz Characteristics MRF3104 MRF3105 MRF3106 8.0 12 dB GAIN Output Power 0.5 W 0.8 W 1.6 W 1.55 1.65 GHz Power Gain 10.5 dB 9 dB 8 dB MICROW

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF3104/D The RF Line MRF3104 Microwave Linear MRF3105 Power Transistors MRF3106 Designed for Class A, Common Emitter Linear Power Amplifiers. Specified 20 Volt, 1.6 GHz Characteristics MRF3104 MRF3105 MRF3106 8.0 12 dB GAIN Output Power 0.5 W 0.8 W 1.6 W 1.55 1.65 GHz Power Gain 10.5 dB 9 dB 8 dB MICROW

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF316/D The RF Line NPN Silicon MRF316 RF Power Transistor . . . designed primarily for wideband large signal output amplifier stages in the 30 200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 80 Watts 80 W, 3.0 200 MHz Minimum Gain = 10 dB CONTROLLED Q BROADBAND RF POWE

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF314/D The RF Line NPN Silicon MRF314 RF Power Transistors . . . designed primarily for wideband large signal driver and output amplifier stages in the 30 200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 30 Watts 30 W, 30 200 MHz Minimum Gain = 10 dB RF POWER 100% Tested

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF316/D The RF Line NPN Silicon MRF316 RF Power Transistor . . . designed primarily for wideband large signal output amplifier stages in the 30 200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 80 Watts 80 W, 3.0 200 MHz Minimum Gain = 10 dB CONTROLLED Q BROADBAND RF POWE

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF316/D The RF Line NPN Silicon MRF316 RF Power Transistor . . . designed primarily for wideband large signal output amplifier stages in the 30 200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 80 Watts 80 W, 3.0 200 MHz Minimum Gain = 10 dB CONTROLLED Q BROADBAND RF POWE

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF314/D The RF Line NPN Silicon MRF314 RF Power Transistors . . . designed primarily for wideband large signal driver and output amplifier stages in the 30 200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 30 Watts 30 W, 30 200 MHz Minimum Gain = 10 dB RF POWER 100% Tested

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF317/D The RF Line NPN Silicon MRF317 RF Power Transistor . . . designed primarily for wideband large signal output amplifier stages in 30 200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W 100 W, 30 200 MHz Minimum Gain = 9.0 dB CONTROLLED Q BROADBAND RF POWER Built

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF317/D The RF Line NPN Silicon MRF317 RF Power Transistor . . . designed primarily for wideband large signal output amplifier stages in 30 200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W 100 W, 30 200 MHz Minimum Gain = 9.0 dB CONTROLLED Q BROADBAND RF POWER Built

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF317/D The RF Line NPN Silicon MRF317 RF Power Transistor . . . designed primarily for wideband large signal output amplifier stages in 30 200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W 100 W, 30 200 MHz Minimum Gain = 9.0 dB CONTROLLED Q BROADBAND RF POWER Built

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF313/D The RF Line NPN Silicon MRF313 High-Frequency Transistor . . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio. Specified 28 Volt, 400 MHz Characteristics Output Power = 1.0 Watt 1.0 W, 400 MHz Power Gain = 15 dB Min HIGH FREQUENCY Efficiency

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF313/D The RF Line NPN Silicon MRF313 High-Frequency Transistor . . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio. Specified 28 Volt, 400 MHz Characteristics Output Power = 1.0 Watt 1.0 W, 400 MHz Power Gain = 15 dB Min HIGH FREQUENCY Efficiency

MRF314 The RF Line NPN Silicon Power Transistor M/A-COM Products Released - Rev. 05202009 30W, 30-200MHz, 28V Designed primarily for wideband large signal driver and output Product Image amplifier stages in the 30 200 MHz frequency range. Guaranteed performance at 150 MHz, 28 Vdc Output power = 30 W Minimum gain = 10 dB 100% tested for load mismatch at all ph

HG RF POWER TRANSISTOR MRF315A Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR DESCRIPTION PACKAGE STYLE .380 4L STUD The HG MRF315A is Designed for .112x45 A Class C Power Amplifier Applications C up to 200 MHz. B E E FEATURES C PG = 9.0 dB min. at 45 W/ 150 MHz B Withstands 30 1 Load VSWR I Omnigold Metalization System D H J MAXIMUM RATINGS G

HG RF POWER TRANSISTOR MRF314A Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR DESCRIPTION PACKAGE STYLE .380 4L FLG The MRF314A is Designed for .112 x 45 B A FEATURES .125 NOM. FULL R J .125 Omnigold Metalization System C D E MAXIMUM RATINGS F I H G IC 9.0 A MINIMUM MAXIMUM VCBO 65 V DIM inches / mm inches / mm .220 / 5