MRF3104 Specs and Replacement

Type Designator: MRF3104

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 22 V

Maximum Emitter-Base Voltage |Veb|: 3.5 V

Maximum Collector Current |Ic max|: 0.4 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 1600 MHz

Collector Capacitance (Cc): 1.5 max pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: CASE305A-01

 MRF3104 Substitution

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MRF3104 datasheet

 ..1. Size:75K  motorola

mrf3104 mrf3105 mrf3106.pdf pdf_icon

MRF3104

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF3104/D The RF Line MRF3104 Microwave Linear MRF3105 Power Transistors MRF3106 Designed for Class A, Common Emitter Linear Power Amplifiers. Specified 20 Volt, 1.6 GHz Characteristics MRF3104 MRF3105 MRF3106 8.0 12 dB GAIN Output Power 0.5 W 0.8 W 1.6 W 1.55 1.65 GHz Power Gain 10.5 dB 9 dB 8 dB MICROW... See More ⇒

 0.1. Size:75K  motorola

mrf3104r.pdf pdf_icon

MRF3104

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF3104/D The RF Line MRF3104 Microwave Linear MRF3105 Power Transistors MRF3106 Designed for Class A, Common Emitter Linear Power Amplifiers. Specified 20 Volt, 1.6 GHz Characteristics MRF3104 MRF3105 MRF3106 8.0 12 dB GAIN Output Power 0.5 W 0.8 W 1.6 W 1.55 1.65 GHz Power Gain 10.5 dB 9 dB 8 dB MICROW... See More ⇒

 9.1. Size:133K  motorola

mrf316rev7.pdf pdf_icon

MRF3104

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF316/D The RF Line NPN Silicon MRF316 RF Power Transistor . . . designed primarily for wideband large signal output amplifier stages in the 30 200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 80 Watts 80 W, 3.0 200 MHz Minimum Gain = 10 dB CONTROLLED Q BROADBAND RF POWE... See More ⇒

 9.2. Size:113K  motorola

mrf314.pdf pdf_icon

MRF3104

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF314/D The RF Line NPN Silicon MRF314 RF Power Transistors . . . designed primarily for wideband large signal driver and output amplifier stages in the 30 200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 30 Watts 30 W, 30 200 MHz Minimum Gain = 10 dB RF POWER 100% Tested ... See More ⇒

Detailed specifications: MRF20060S, MRF2947AT1, MRF2947AT2, MRF2947RAT1, MRF2947RAT2, MRF3094, MRF3095, MRF3096, BD136, MRF3105, MRF3106, MRF338, MRF4427R2, MRF553, MRF557, MRF5583, MRF559

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