MRF557 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MRF557  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 3 W

Tensión colector-base (Vcb): 36 V

Tensión colector-emisor (Vce): 16 V

Tensión emisor-base (Veb): 4 V

Corriente del colector DC máxima (Ic): 0.4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 870 MHz

Capacitancia de salida (Cc): 3.5 pF

Ganancia de corriente contínua (hFE): 50

Encapsulados: CASE317D-02

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MRF557 datasheet

 ..1. Size:91K  motorola
 mrf557.pdf pdf_icon

MRF557

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF557/D The RF Line NPN Silicon MRF557 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the 800 MHz frequency range. Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W 1.5 W, 870 MHz Minimum Gain = 8.0 dB RF LOW POWER Efficiency 60% (Typ) TRANSISTOR Cost E

 0.1. Size:91K  motorola
 mrf557re.pdf pdf_icon

MRF557

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF557/D The RF Line NPN Silicon MRF557 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the 800 MHz frequency range. Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W 1.5 W, 870 MHz Minimum Gain = 8.0 dB RF LOW POWER Efficiency 60% (Typ) TRANSISTOR Cost E

 9.1. Size:99K  motorola
 mrf555re.pdf pdf_icon

MRF557

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF555/D The RF Line NPN Silicon MRF555 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the UHF frequency range. Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 W Common Emitter Power Gain = 12.5 dB (Typ) 1.5 W, 470 MHz Efficiency 60% (Typ) RF LOW POWER Cost Effe

 9.2. Size:94K  motorola
 mrf553.pdf pdf_icon

MRF557

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF553/D The RF Line NPN Silicon MRF553 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the VHF frequency range. Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W 1.5 W, 175 MHz Minimum Gain = 11.5 dB RF LOW POWER Efficiency 60% (Typ) TRANSISTOR Cost Effe

MOSTRAR MÁS

Otros transistores... MRF3095, MRF3096, MRF3104, MRF3105, MRF3106, MRF338, MRF4427R2, MRF553, BDT88, MRF5583, MRF559, MRF5812, MRF5811LT1, MRF5943, MRF6402, MRF6404, MRF6404K