MRF8372R2 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MRF8372R2

Código: 8372

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.67 W

Tensión colector-base (Vcb): 36 V

Tensión colector-emisor (Vce): 16 V

Tensión emisor-base (Veb): 4 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 870 MHz

Capacitancia de salida (Cc): 1.8 pF

Ganancia de corriente contínua (hFE): 30

Encapsulados: SO8

 Búsqueda de reemplazo de MRF8372R2

- Selecciónⓘ de transistores por parámetros

 

MRF8372R2 datasheet

 ..1. Size:101K  motorola
 mrf8372r1 mrf8372r2.pdf pdf_icon

MRF8372R2

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF8372/D The RF Line NPN Silicon MRF8372R1, R2 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW 750 mW, 870 MHz Minimum Gain = 8.0 dB RF LOW POWER Efficiency 60% (Typ) TRANSIS

 6.1. Size:101K  motorola
 mrf8372rev0.pdf pdf_icon

MRF8372R2

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF8372/D The RF Line NPN Silicon MRF8372R1, R2 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW 750 mW, 870 MHz Minimum Gain = 8.0 dB RF LOW POWER Efficiency 60% (Typ) TRANSIS

 8.1. Size:181K  motorola
 mrf837.pdf pdf_icon

MRF8372R2

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF837/D The RF Line NPN Silicon MRF837 RF Low Power Transistor MRF8372, R1, R2 Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW 750 mW, 870 MHz Minimum Gain = 8.0 dB RF LOW POWER Efficiency 60% (Typ)

 8.2. Size:181K  motorola
 mrf837re.pdf pdf_icon

MRF8372R2

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF837/D The RF Line NPN Silicon MRF837 RF Low Power Transistor MRF8372, R1, R2 Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW 750 mW, 870 MHz Minimum Gain = 8.0 dB RF LOW POWER Efficiency 60% (Typ)

MOSTRAR MÁS

Otros transistores... MRF6402, MRF6404, MRF6404K, MRF6408, MRF6409, MRF653S, MRF837, MRF8372R1, TIP41, MRF847, MRF857, MRF858, MRF858S, MRF859, MRF859S, MRF860, MRF861