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MRF8372R2 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MRF8372R2
   Código: 8372
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1.67 W
   Tensión colector-base (Vcb): 36 V
   Tensión colector-emisor (Vce): 16 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 870 MHz
   Capacitancia de salida (Cc): 1.8 pF
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: SO8
 

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MRF8372R2 Datasheet (PDF)

 ..1. Size:101K  motorola
 mrf8372r1 mrf8372r2.pdf pdf_icon

MRF8372R2

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF8372/DThe RF LineNPN SiliconMRF8372R1, R2RF Low Power TransistorDesigned primarily for wideband large signal predriver stages in 800 MHzand UHF frequency ranges. Specified @ 12.5 V, 870 MHz CharacteristicsOutput Power = 750 mW750 mW, 870 MHzMinimum Gain = 8.0 dBRF LOW POWEREfficiency 60% (Typ)TRANSIS

 6.1. Size:101K  motorola
 mrf8372rev0.pdf pdf_icon

MRF8372R2

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF8372/DThe RF LineNPN SiliconMRF8372R1, R2RF Low Power TransistorDesigned primarily for wideband large signal predriver stages in 800 MHzand UHF frequency ranges. Specified @ 12.5 V, 870 MHz CharacteristicsOutput Power = 750 mW750 mW, 870 MHzMinimum Gain = 8.0 dBRF LOW POWEREfficiency 60% (Typ)TRANSIS

 8.1. Size:181K  motorola
 mrf837.pdf pdf_icon

MRF8372R2

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF837/DThe RF LineNPN SiliconMRF837RF Low Power TransistorMRF8372, R1, R2Designed primarily for wideband large signal predriver stages in 800 MHzand UHF frequency ranges. Specified @ 12.5 V, 870 MHz CharacteristicsOutput Power = 750 mW750 mW, 870 MHzMinimum Gain = 8.0 dBRF LOW POWEREfficiency 60% (Typ)

 8.2. Size:181K  motorola
 mrf837re.pdf pdf_icon

MRF8372R2

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF837/DThe RF LineNPN SiliconMRF837RF Low Power TransistorMRF8372, R1, R2Designed primarily for wideband large signal predriver stages in 800 MHzand UHF frequency ranges. Specified @ 12.5 V, 870 MHz CharacteristicsOutput Power = 750 mW750 mW, 870 MHzMinimum Gain = 8.0 dBRF LOW POWEREfficiency 60% (Typ)

MOSTRAR MÁS

Otros transistores... MRF6402 , MRF6404 , MRF6404K , MRF6408 , MRF6409 , MRF653S , MRF837 , MRF8372R1 , A1015 , MRF847 , MRF857 , MRF858 , MRF858S , MRF859 , MRF859S , MRF860 , MRF861 .

History: 2SA1182 | KSR2113 | DTC143TUA | MP14 | 2SC3338 | NKT773

 

 
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