MRF858S . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF858S
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20 W
Tensión colector-base (Vcb): 55 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 960 MHz
Capacitancia de salida (Cc): 6.5 pF
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: CASE319A-02
Búsqueda de reemplazo de MRF858S
MRF858S Datasheet (PDF)
mrf858 mrf858s.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF858/DThe RF LineMRF858NPN SiliconMRF858SRF Power TransistorDesigned for 24 Volt UHF largesignal, common emitter, class A linearamplifier applications in industrial and commercial equipment operating in therange of 800960 MHz.CLASS A800960 MHz Specified for VCE = 24 Vdc, IC = 0.5 Adc Characterist
mrf858re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF858/DThe RF LineMRF858NPN SiliconMRF858SRF Power TransistorDesigned for 24 Volt UHF largesignal, common emitter, class A linearamplifier applications in industrial and commercial equipment operating in therange of 800960 MHz.CLASS A800960 MHz Specified for VCE = 24 Vdc, IC = 0.5 Adc Characterist
mrf857rev3.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF857/DThe RF LineNPN SiliconMRF857SRF Power TransistorDesigned for 24 Volt UHF largesignal, common emitter, class A linearamplifier applications in industrial and commercial equipment operating in therange of 800960 MHz.CLASS A800960 MHz Specified for VCE = 24 Vdc, IC = 0.3 Adc Characteristics2.1
mrf859re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF859/DThe RF LineMRF859NPN SiliconMRF859SRF Power TransistorDesigned for 24 Volt UHF largesignal, common emitter, class A linearCLASS Aamplifier applications in industrial and commercial equipment operating in the800960 MHzrange of 800 to 960 MHz.6.5 W (CW), 24 V Specified for VCE = 24 Vdc, IC = 0
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2SB1135Q
History: 2SB1135Q
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