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MRF911 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MRF911
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.4 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 12 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 0.04 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 5000(typ) MHz
   Capacitancia de salida (Cc): 0.6 pF
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: CASE317-01

 Búsqueda de reemplazo de transistor bipolar MRF911

 

MRF911 Datasheet (PDF)

 ..1. Size:78K  motorola
mrf911.pdf

MRF911 MRF911

 9.1. Size:252K  motorola
mrf917t1.pdf

MRF911 MRF911

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAfrom RF MarketingThe RF Small Signal LineMRF917T1NPN SiliconHigh-Frequency TransistorsDesigned for low noise, wide dynamic range front end amplifiers, atLOW NOISEfrequencies to 1.5 GHz. Specifically aimed at portable communication devicesHIGH FREQUENCYsuch as pagers and handheld phones.TRANSISTOR Small, Sur

 9.2. Size:252K  motorola
mrf917t1rev0mds.pdf

MRF911 MRF911

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAfrom RF MarketingThe RF Small Signal LineMRF917T1NPN SiliconHigh-Frequency TransistorsDesigned for low noise, wide dynamic range front end amplifiers, atLOW NOISEfrequencies to 1.5 GHz. Specifically aimed at portable communication devicesHIGH FREQUENCYsuch as pagers and handheld phones.TRANSISTOR Small, Sur

 9.3. Size:309K  freescale
mrf9180.pdf

MRF911 MRF911

Document Number: MRF9180Freescale SemiconductorRev. 10, 5/2006Technical DataRF Power Field Effect TransistorN-Channel Enhancement-Mode Lateral MOSFETMRF9180R6Designed for broadband commercial and industrial applications withfrequencies from 865 to 895 MHz. The high gain and broadband performanceof this device make it ideal for large- signal, common- source amplifierapplicati

 9.4. Size:385K  freescale
mrf9135l.pdf

MRF911 MRF911

Document Number: MRF9135LFreescale SemiconductorRev. 8, 5/2006Technical DataRF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETsDesigned for broadband commercial and industrial applications withMRF9135LR3frequencies from 865 to 895 MHz. The high gain and broadband performanceMRF9135LSR3of these devices make them ideal for large-signal, common-source am

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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