MRF911 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF911
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.4 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 12 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 0.04 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 5000 typ MHz
Capacitancia de salida (Cc): 0.6 pF
Ganancia de corriente contínua (hFE): 30
Encapsulados: CASE317-01
Búsqueda de reemplazo de MRF911
- Selecciónⓘ de transistores por parámetros
MRF911 datasheet
mrf917t1.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA from RF Marketing The RF Small Signal Line MRF917T1 NPN Silicon High-Frequency Transistors Designed for low noise, wide dynamic range front end amplifiers, at LOW NOISE frequencies to 1.5 GHz. Specifically aimed at portable communication devices HIGH FREQUENCY such as pagers and hand held phones. TRANSISTOR Small, Sur
mrf917t1rev0mds.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA from RF Marketing The RF Small Signal Line MRF917T1 NPN Silicon High-Frequency Transistors Designed for low noise, wide dynamic range front end amplifiers, at LOW NOISE frequencies to 1.5 GHz. Specifically aimed at portable communication devices HIGH FREQUENCY such as pagers and hand held phones. TRANSISTOR Small, Sur
mrf9180.pdf
Document Number MRF9180 Freescale Semiconductor Rev. 10, 5/2006 Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF9180R6 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of this device make it ideal for large- signal, common- source amplifier applicati
Otros transistores... MRF860, MRF861, MRF862, MRF880, MRF890, MRF892, MRF896, MRF898, A1941, MRF917T1, MRF927T1, MRF927T3, MRF949T1, MRF959T1, NT407F, 2SA812-M4, 2SA812-M5
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