MRF911 Datasheet and Replacement
Type Designator: MRF911
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.04 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5000(typ) MHz
Collector Capacitance (Cc): 0.6 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: CASE317-01
MRF911 Datasheet (PDF)
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mrf917t1rev0mds.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAfrom RF MarketingThe RF Small Signal LineMRF917T1NPN SiliconHigh-Frequency TransistorsDesigned for low noise, wide dynamic range front end amplifiers, atLOW NOISEfrequencies to 1.5 GHz. Specifically aimed at portable communication devicesHIGH FREQUENCYsuch as pagers and handheld phones.TRANSISTOR Small, Sur
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Document Number: MRF9180Freescale SemiconductorRev. 10, 5/2006Technical DataRF Power Field Effect TransistorN-Channel Enhancement-Mode Lateral MOSFETMRF9180R6Designed for broadband commercial and industrial applications withfrequencies from 865 to 895 MHz. The high gain and broadband performanceof this device make it ideal for large- signal, common- source amplifierapplicati
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
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History: TA2512



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