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MRF949T1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MRF949T1
   Código: JL
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.144 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 10 V
   Tensión emisor-base (Veb): 1.5 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 9000(typ) MHz
   Capacitancia de salida (Cc): 0.4 pF
   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: SC90

 Búsqueda de reemplazo de transistor bipolar MRF949T1

 

MRF949T1 Datasheet (PDF)

 ..1. Size:166K  motorola
 mrf949t1.pdf

MRF949T1 MRF949T1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF949T1/DThe RF LineMRF949T1NPN SiliconLow Noise TransistorsMotorolas MRF949 is a high performance NPN transistor designed for use inhigh gain, low noise smallsignal amplifiers. The MRF949 is well suited for low ICmax = 50 mAvoltage wireless applications. This device features a 9 GHz DC current LOW NOISEgain

 0.1. Size:166K  motorola
 mrf949t1rev0.pdf

MRF949T1 MRF949T1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF949T1/DThe RF LineMRF949T1NPN SiliconLow Noise TransistorsMotorolas MRF949 is a high performance NPN transistor designed for use inhigh gain, low noise smallsignal amplifiers. The MRF949 is well suited for low ICmax = 50 mAvoltage wireless applications. This device features a 9 GHz DC current LOW NOISEgain

 9.1. Size:386K  motorola
 mrf941 mmbr941lt1 mrf9411lt1 mrf947.pdf

MRF949T1 MRF949T1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR941LT1/DThe RF LineMMBR941NPN SiliconMRF941Low Noise, High-FrequencyMRF947TransistorsMRF9411Designed for use in high gain, low noise smallsignal amplifiers. This seriesfeatures excellent broadband linearity and is offered in a variety of packages.SERIES Fully Implanted Base and Emitter Structure

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