BC807-16Q . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BC807-16Q
Código: 5A
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar BC807-16Q
BC807-16Q Datasheet (PDF)
bc807-16q bc807-25q bc807-40q.pdf
RoHS RoHSCOMPLIANT COMPLIANTBC807-16Q THRU BC807-40Q PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 Part no. with suffix Q means AEC-Q101 qualified Mechanical Data : SOT-23 Case Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marki
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC80716LT1/DBC807-16LT1General Purpose TransistorsPNP SiliconBC807-25LT1COLLECTOR3BC807-40LT12BASE13EMITTERMAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage VCEO 45 VCollectorBase Voltage VCBO 50 V CASE 31808, STYLE 6SOT23 (TO236AB)EmitterBase Voltag
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BC807H series45 V, 500 mA PNP general-purpose transistorsRev. 1 5 March 2019 Product data sheet1. Product profile1.1. General descriptionPNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD)plastic package.Table 1. Product overviewType number Package NPN comlementNexperia JEDECBC807-16H SOT23 TO-236AB BC817K-16HBC807-25H BC817K-25HB
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BC807L; BC807LW45 V, 500 mA PNP general-purpose transistorsRev. 1 5 January 2018 Product data sheet1 Product profile1.1 General descriptionPNP general-purpose transistors in a small SOT23 (TO-236AB) or SOT323 (SC-70)Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number PackageNexperia JEITA JEDECBC807-16L SOT23 - TO-236ABBC807-25LBC807-40L
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BC807 series45 V, 500 mA PNP general-purpose transistorsRev. 7 15 June 2018 Product data sheet1 Product profile1.1 General descriptionPNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device(SMD) plastic package.Table 1. Product overviewType number Package NPNcomplementNexperia JEDEC JEITABC807 SOT23 TO-236AB - BC817BC807-16 BC817-16BC807-
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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
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BC807W series45 V, 500 mA PNP general-purpose transistorsRev. 7 3 July 2018 Product data sheet1 Product profile1.1 General descriptionPNP general-purpose transistors in a very small SOT323 (SC-70) Surface-MountedDevice (SMD) plastic package.Table 1. Product overviewType number Package NPN complementNexperia JEDEC JEITABC807W SOT323 - SC-70 BC817WBC807-16W BC817-16WBC
bc807-16w.pdf
BC 807-16WPNP Silicon AF Transistor For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC817W, BC818W (NPN)Type Marking Ordering Code Pin Configuration PackageBC 807-16W 5As Q62702-C2325 1 = B 2 = E 3 = C SOT-323BC 807-25W 5Bs Q62702-C2326 1 = B 2 = E 3 = C SOT-323BC 807-40W 5Cs Q6
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BC807-16/ -25/ -40 PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Ideally Suited for Automatic Insertion A SOT-23 Epitaxial Planar Die Construction CDim Min Max For Switching, AF Driver and Amplifier Applications A 0.37 0.51 Complementary NPN Types Available (BC817) B CB 1.20 1.40 Lead, Halogen and
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BC807-16W / -25W / -40WPNP SURFACE MOUNT TRANSISTORLead-free GreenFeatures Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier ApplicationsSOT-323 Complementary NPN Types Available (BC817-xxW)Dim Min Max Lead Free By Design/RoHS Compliant (Note 1)AA0.25 0.40 "Green" Device (Note 2)CB1.15 1.35Mechanic
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BC807-16W/ -25W/ -40W45V PNP SMALL SIGNAL TRANSISTOR IN SOT323 Features Mechanical Data Ideally Suited for Automatic Insertion Case: SOT323 Epitaxial Planar Die Construction Case Material: Molded Plastic, Green Molding Compound Complementary NPN Types Available (BC817-xxW) UL Flammability Classification Rating 94V-0 For Switching and AF Amplifier Applica
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BC807-16/-25/-40 45V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Ideally Suited for Automatic Insertion Case: SOT23 Epitaxial Planar Die Construction Case Material: Molded Plastic, Green Molding Compound Complementary NPN Types Available (BC817) UL Flammability Classification Rating 94V-0 For switching and AF Amplifier Applications
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BC807-16 THRU BC807-40Features Halogen free available upon request by adding suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingPNP Small Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Signal Transistor 300mWMaximum RatingsSOT-23 Operating Junction Temperature Range: -55 to
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BC807-16MCCMicro Commercial ComponentsTMBC807-2520736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311BC807-40Phone: (818) 701-4933Fax: (818) 701-4939FeaturesPNP Silicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)General Purpose Capable of 0.3Watts of Power Dissipation. Collector-curren
sbc807-16lt1g.pdf
BC807-16L, BC807-25L,BC807-40LGeneral PurposeTransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1Compliant BASE2EMITTERMAXIMUM RATINGSRating Symbol Value
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DATA SHEETwww.onsemi.comGeneral PurposeCOLLECTORTransistors 3PNP Silicon1BASEBC807-16L, BC807-25L,2BC807-40LEMITTERFeatures S Prefix for Automotive and Other Applications Requiring Unique3Site and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2CompliantSOT-23CASE 318
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BC807-16L, BC807-25L,BC807-40LGeneral PurposeTransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1Compliant BASE2EMITTERMAXIMUM RATINGSRating Symbol Value
bc807-16lt1-25lt1-40lt1.pdf
BC807-16LT1G,BC807-25LT1G,BC807-40LT1GGeneral PurposeTransistorshttp://onsemi.comPNP SiliconCOLLECTOR3Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASE2MAXIMUM RATINGSEMITTERRating Symbol Value UnitCollector - Emitter Voltage VCEO -45 V3Collector - Base Voltage VCBO -50 VEmitter - Base Voltage VEBO -5.0 V12Col
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BC807-16L, BC807-25L,BC807-40LGeneral PurposeTransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1Compliant BASE2EMITTERMAXIMUM RATINGSRating Symbol Value
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ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
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BC807-16L, BC807-25L,BC807-40LGeneral PurposeTransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1Compliant BASE2EMITTERMAXIMUM RATINGSRating Symbol Value
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BC8 07TRANSISTOR (PNP) BC807-16SOT-23 BC807-25 BC807-40 FEATURES 1. BASE Ldeally suited for automatic insertion 2. EMITTER epitaxial planar die construction 3. COLLECTOR complementary NPN type available(BC817) MARKING: 807-16:5A; 807-25:5B; 807-40:5C MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage
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BC807-16/-25/-40 PNP General Purpose Amplifier1. BASE 2. EMITTER3. COLLECTORFEATURES A For general AF applications E Complementary NPN type available K BBC817 High collector current JD High current gain G Low collector-emitter saturation voltage HORDERING INFORMATION CType No. Marking Package Code BC807-16 5A SOT-23 BC807-25 5B SOT-23 BC8
bc807-16-25-40.pdf
BC807-16/BC807-25BC807-40COLLECTOR3General Purpose Transistor MARKING DIAGRAM3PNP Silicon1BASE122 SOT-23EMITTER( T =25 C unless otherwise noted)Maximum Ratings ASymbolRating Value UnitVCEO-45 VCollector-Emitter VoltageVCBOCollector-Base Voltage -50 VEmitter-Base VOltageVEBO-5.0 VCollector Current-Continuous IC 500 mAdcThermal Characteristics
bc807-16w-25w-40w.pdf
BC807-16WBC807-25WBC807-40WCOLLECTORGeneral Purpose Transistor 33PNP Silicon11P b Lead(Pb)-FreeBASE22EMITTERSOT-323(SC-70)MaximumRatings (TA=25Cunless otherwise noted)Rating Symbol Value UnitVCEOCollector-Emitter Voltage -45 VCollector-Base Voltage VCBO -50 VEmitter-Base Voltage -5.0 VVEBOICCollector Current-Continuous 500mATotal Device Diss
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BC807 / BC808-AH PNP Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier applications These transistors are subdivided into three groups -16, -25 and -40, according to their current gain. As complementary types the NPN transistors BC817 and BC818 are recommended. TO-236 Plastic Package Features AEC-Q101 Qualified and PPAP Capable Halogen and A
lbc807-16lt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFEATURELBC807-16LT1G Collector current capability IC = -500 mA.LBC807-25LT1G Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification.LBC807-40LT1G PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.3 S- Prefix for Au
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LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFEATURE Collector current capability IC = -500 mA. LBC807-16WT1G Collector-emitter voltage VCEO(max) = -45 V. S-LBC807-16WT1G General purpose switching and amplification. PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.3 S- Prefix for Automotive and Other
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LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconLBC807-16LT1GFEATURELBC807-25LT1GLBC807-40LT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification.3 PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.12DEVICE MARKIN
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LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconLBC807-16LT1GFEATURE Collector current capability IC = -500 mA. LBC807-25LT1G Collector-emitter voltage VCEO(max) = -45 V.LBC807-40LT1G General purpose switching and amplification.S-LBC807-16LT1G PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.S-LBC8
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LESHAN RADIO COMPANY, LTD.LBC807-16DMT1GLBC807-25DMT1GDual General Purpose TransistorsLBC807-40DMTPNP DualsS-LBC807-16DMT1G We declare that the material of product compliance with RoHS requirements.S-LBC807-25DMT1G S- Prefix for Automotive and Other Applications Requiring Unique SiteDMT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LBC807-4
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PBC807-16W-AU / BC807-25W-AU / BC807-40W-AU Silicon PNP General Purpose Transistors SOT-323 Unit: inch(mm) Voltage -45V Current -500mA Features Silicon PNP Epitaxial type Excellent DC current gain characteristics General purpose amplifier application AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 6124
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BC80716~BC80740PNP GENERAL PURPOSE TRANSISTORS45 Volt POWER 330 mWattVOLTAGEFEATURES0.120(3.04) General purpose amplifier applications0.110(2.80) PNP epitaxial silicon, planar design Collector current IC = 500mA Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive)0.056(1.40) Green molding compound as per IEC61249 Std. .0.047
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KBC807 16/25/40C P N P S i l i c o n T r a n s i s t o r 2018.08.06 2018.08.06 2018.08.06 2018.08.06 1 000 2017.07.22 2 001 2018.01.12 3 BV 002 2018.08.
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BC807PNP Silicon Epitaxial Planar TransistorsSOT-23 FEATURE Ldeally suited for automatic insertion Epitaxial planar die construction 1. BASE Complementary NPN type available(BC817) 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V V Emitter-Base
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RUMW UMW BC807SOT-23 Plastic-Encapsulate Transistors BC807 TRANSISTOR (PNP) SOT-23 FEATURE Ldeally suited for automatic insertion Epitaxial planar die construction 1. BASE Complementary NPN type available(BC817) 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-
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BC807/BC808-16/-25/-40PNP TransistorFeaturesSOT-23 For switching, AF driver and amplifier applications These transistors are subdivided into three groups-16, -25 and -40, according to their current gain. Ascomplementary types the NPN transistors BC817 andBC818 are recommended1 Base 2. Emitter 3. CollectorAbsolute Maximum Ratings (T =25, unless otherwisenoted)APa
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SOT-23 PNP Plastic-Encapsulate Transistors AS-3140050SOT-23 PNP Plastic-Encapsulate Transistors AS-3140050SOT-23 PNP Plastic-Encapsulate Transistors AS-3140050
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BC807SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP )FeaturesSOT- 23 High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC817 (NPN) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V V Collector-Emitter Voltage -45 V CEOCV Emitter-Base Voltage -5 V EBOI Collector Current C-
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www.msksemi.comBC807-16/-25/-40Semiconductor CompianceSemiconductor CompianceSOT-23 FEATURE Ldeally suited for automatic insertion Epitaxial planar die construction 1. BASE Complementary NPN type available(BC817) 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-E
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Jingdao Microelectronics co.LTD BC807 BC807SOT-23PNP TRANSISTOR3FEATURES Ldeally suited for automatic insertion Epitaxial planar die construction Complementary NPN type available(BC817)1MAXIMUM RATINGS (Ta=25 unless otherwise noted)2Parameter Symbol Value Unit1.BASECollectorBase Voltage VCBO -50
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BC807 SeriesTRANSISTOR (PNP)MARKING: Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: Ldeally suited for automatic insertion Epitaxial planar die construction Complementary NPN type available(BC817)MAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage VCBO -50 VCollector-Emitter Voltage VCEO -45 VEmi
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BC807 TRANSISTOR(PNP) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features BC817 ; Complementary to BC817 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Package
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BC807BC807BC807BC807BC8 0 7 TRANSISTOR(PNP)FEATURESSOT-23 Ideally Suited for Automatic InsertionEpitaxial Planar Die Construction1BASE 2EMITTER For Switching, AF Driver and Amplifier3COLLECTOR ApplicationsMARKING:BC807-16:5AComplementary NPN Types Available (BC817)BC807-25:5BBC807-40:5CMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Para
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RoHS COMPLIANT BC807-16W THRU BC807-40W PNP General Purpose Amplifier Features Capable of 0.2Watts(TA=25) of Power Dissipation Collector-current -0.5A Collector-base Voltage -50VEpoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Device Marking: BC807-16W 5A BC807-2
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RoHS COMPLIANT BC807-16 THRU BC807-40 PNP General Purpose Amplifier Features Capable of 0.3Watts(TA=25) of Power Dissipation Collector current -0.5A Collector-base Voltage -50VEpoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Device Marking: BC807-16 5A BC807-25 5
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BC807BIPOLAR TRANSISTOR (PNP)FEATURES Complementary to BC817 High Collector Current Epitaxial planar die construction High current gain Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwis
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BC807-16 BC807-25 BC807-40 FeaturesLdeally suited for automatic insertion epitaxial planar die construction complementary NPN type available(BC817) MARKING: 807-16:5A; 807-25:5B; 807-40:5C SOT-23 ADim Min MaxC0.37 0.51 AB C B1.20 1.40 C2.30 2.50TOP VIEWB ED0.89 1.03DEGE0.45 0.60G1.78 2.05MAX
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050