Биполярный транзистор BC807-16Q
Даташит. Аналоги
Наименование производителя: BC807-16Q
Маркировка: 5A
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.3
W
Макcимально допустимое напряжение коллектор-база (Ucb): 50
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 0.5
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 100
MHz
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора:
SOT23
- подбор биполярного транзистора по параметрам
BC807-16Q
Datasheet (PDF)
..1. Size:276K cn yangzhou yangjie elec
bc807-16q bc807-25q bc807-40q.pdf 

RoHS RoHSCOMPLIANT COMPLIANTBC807-16Q THRU BC807-40Q PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 Part no. with suffix Q means AEC-Q101 qualified Mechanical Data : SOT-23 Case Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marki
6.1. Size:90K motorola
bc807-16 bc807–25 bc807–40.pdf 

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC80716LT1/DBC807-16LT1General Purpose TransistorsPNP SiliconBC807-25LT1COLLECTOR3BC807-40LT12BASE13EMITTERMAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage VCEO 45 VCollectorBase Voltage VCBO 50 V CASE 31808, STYLE 6SOT23 (TO236AB)EmitterBase Voltag
6.2. Size:361K nxp
bc807-16h bc807-25h bc807-40h.pdf 

BC807H series45 V, 500 mA PNP general-purpose transistorsRev. 1 5 March 2019 Product data sheet1. Product profile1.1. General descriptionPNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD)plastic package.Table 1. Product overviewType number Package NPN comlementNexperia JEDECBC807-16H SOT23 TO-236AB BC817K-16HBC807-25H BC817K-25HB
6.3. Size:245K nxp
bc807-16l bc807-25l bc807-40l bc807-16lw bc807-25lw bc807-40lw.pdf 

BC807L; BC807LW45 V, 500 mA PNP general-purpose transistorsRev. 1 5 January 2018 Product data sheet1 Product profile1.1 General descriptionPNP general-purpose transistors in a small SOT23 (TO-236AB) or SOT323 (SC-70)Surface-Mounted Device (SMD) plastic package.Table 1. Product overviewType number PackageNexperia JEITA JEDECBC807-16L SOT23 - TO-236ABBC807-25LBC807-40L
6.4. Size:281K nxp
bc807 bc807-16 bc807-25 bc807-40.pdf 

BC807 series45 V, 500 mA PNP general-purpose transistorsRev. 7 15 June 2018 Product data sheet1 Product profile1.1 General descriptionPNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device(SMD) plastic package.Table 1. Product overviewType number Package NPNcomplementNexperia JEDEC JEITABC807 SOT23 TO-236AB - BC817BC807-16 BC817-16BC807-
6.6. Size:285K nxp
bc807 bc807-16w bc807-25w bc807-40w.pdf 

BC807W series45 V, 500 mA PNP general-purpose transistorsRev. 7 3 July 2018 Product data sheet1 Product profile1.1 General descriptionPNP general-purpose transistors in a very small SOT323 (SC-70) Surface-MountedDevice (SMD) plastic package.Table 1. Product overviewType number Package NPN complementNexperia JEDEC JEITABC807W SOT323 - SC-70 BC817WBC807-16W BC817-16WBC
6.7. Size:91K siemens
bc807-16w.pdf 

BC 807-16WPNP Silicon AF Transistor For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC817W, BC818W (NPN)Type Marking Ordering Code Pin Configuration PackageBC 807-16W 5As Q62702-C2325 1 = B 2 = E 3 = C SOT-323BC 807-25W 5Bs Q62702-C2326 1 = B 2 = E 3 = C SOT-323BC 807-40W 5Cs Q6
6.8. Size:114K diodes
bc807-16-25-40.pdf 

BC807-16/ -25/ -40 PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Ideally Suited for Automatic Insertion A SOT-23 Epitaxial Planar Die Construction CDim Min Max For Switching, AF Driver and Amplifier Applications A 0.37 0.51 Complementary NPN Types Available (BC817) B CB 1.20 1.40 Lead, Halogen and
6.9. Size:355K diodes
bc807-16w-25w-40w.pdf 

BC807-16W / -25W / -40WPNP SURFACE MOUNT TRANSISTORLead-free GreenFeatures Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier ApplicationsSOT-323 Complementary NPN Types Available (BC817-xxW)Dim Min Max Lead Free By Design/RoHS Compliant (Note 1)AA0.25 0.40 "Green" Device (Note 2)CB1.15 1.35Mechanic
6.10. Size:221K diodes
bc807-16w bc807-25w bc807-40w.pdf 

BC807-16W/ -25W/ -40W45V PNP SMALL SIGNAL TRANSISTOR IN SOT323 Features Mechanical Data Ideally Suited for Automatic Insertion Case: SOT323 Epitaxial Planar Die Construction Case Material: Molded Plastic, Green Molding Compound Complementary NPN Types Available (BC817-xxW) UL Flammability Classification Rating 94V-0 For Switching and AF Amplifier Applica
6.11. Size:246K diodes
bc807-16 bc807-25 bc807-40.pdf 

BC807-16/-25/-40 45V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Ideally Suited for Automatic Insertion Case: SOT23 Epitaxial Planar Die Construction Case Material: Molded Plastic, Green Molding Compound Complementary NPN Types Available (BC817) UL Flammability Classification Rating 94V-0 For switching and AF Amplifier Applications
6.12. Size:466K mcc
bc807-16 bc807-25 bc807-40.pdf 

BC807-16 THRU BC807-40Features Halogen free available upon request by adding suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingPNP Small Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Signal Transistor 300mWMaximum RatingsSOT-23 Operating Junction Temperature Range: -55 to
6.13. Size:196K mcc
bc807-16-25-40 sot-23.pdf 

BC807-16MCCMicro Commercial ComponentsTMBC807-2520736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311BC807-40Phone: (818) 701-4933Fax: (818) 701-4939FeaturesPNP Silicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)General Purpose Capable of 0.3Watts of Power Dissipation. Collector-curren
6.14. Size:89K onsemi
sbc807-16lt1g.pdf 

BC807-16L, BC807-25L,BC807-40LGeneral PurposeTransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1Compliant BASE2EMITTERMAXIMUM RATINGSRating Symbol Value
6.15. Size:188K onsemi
bc807-16l bc807-25l bc807-40l.pdf 

DATA SHEETwww.onsemi.comGeneral PurposeCOLLECTORTransistors 3PNP Silicon1BASEBC807-16L, BC807-25L,2BC807-40LEMITTERFeatures S Prefix for Automotive and Other Applications Requiring Unique3Site and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2CompliantSOT-23CASE 318
6.16. Size:89K onsemi
bc807-25lt3g bc807-16lt3g.pdf 

BC807-16L, BC807-25L,BC807-40LGeneral PurposeTransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1Compliant BASE2EMITTERMAXIMUM RATINGSRating Symbol Value
6.17. Size:118K onsemi
bc807-16lt1-25lt1-40lt1.pdf 

BC807-16LT1G,BC807-25LT1G,BC807-40LT1GGeneral PurposeTransistorshttp://onsemi.comPNP SiliconCOLLECTOR3Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASE2MAXIMUM RATINGSEMITTERRating Symbol Value UnitCollector - Emitter Voltage VCEO -45 V3Collector - Base Voltage VCBO -50 VEmitter - Base Voltage VEBO -5.0 V12Col
6.18. Size:89K onsemi
bc807-16lt1g bc807-40lt1g.pdf 

BC807-16L, BC807-25L,BC807-40LGeneral PurposeTransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1Compliant BASE2EMITTERMAXIMUM RATINGSRating Symbol Value
6.19. Size:205K onsemi
bc807-16lt1g bc807-25lt1g bc807-40lt1g.pdf 

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
6.20. Size:89K onsemi
sbc807-16lt3g.pdf 

BC807-16L, BC807-25L,BC807-40LGeneral PurposeTransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1Compliant BASE2EMITTERMAXIMUM RATINGSRating Symbol Value
6.21. Size:566K htsemi
bc807-16 bc807-25 bc807-40.pdf 

BC8 07TRANSISTOR (PNP) BC807-16SOT-23 BC807-25 BC807-40 FEATURES 1. BASE Ldeally suited for automatic insertion 2. EMITTER epitaxial planar die construction 3. COLLECTOR complementary NPN type available(BC817) MARKING: 807-16:5A; 807-25:5B; 807-40:5C MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage
6.22. Size:1123K lge
bc807-16 bc807-25 bc807-40.pdf 

BC807-16/-25/-40 PNP General Purpose Amplifier1. BASE 2. EMITTER3. COLLECTORFEATURES A For general AF applications E Complementary NPN type available K BBC817 High collector current JD High current gain G Low collector-emitter saturation voltage HORDERING INFORMATION CType No. Marking Package Code BC807-16 5A SOT-23 BC807-25 5B SOT-23 BC8
6.23. Size:337K wietron
bc807-16-25-40.pdf 

BC807-16/BC807-25BC807-40COLLECTOR3General Purpose Transistor MARKING DIAGRAM3PNP Silicon1BASE122 SOT-23EMITTER( T =25 C unless otherwise noted)Maximum Ratings ASymbolRating Value UnitVCEO-45 VCollector-Emitter VoltageVCBOCollector-Base Voltage -50 VEmitter-Base VOltageVEBO-5.0 VCollector Current-Continuous IC 500 mAdcThermal Characteristics
6.24. Size:158K wietron
bc807-16w-25w-40w.pdf 

BC807-16WBC807-25WBC807-40WCOLLECTORGeneral Purpose Transistor 33PNP Silicon11P b Lead(Pb)-FreeBASE22EMITTERSOT-323(SC-70)MaximumRatings (TA=25Cunless otherwise noted)Rating Symbol Value UnitVCEOCollector-Emitter Voltage -45 VCollector-Base Voltage VCBO -50 VEmitter-Base Voltage -5.0 VVEBOICCollector Current-Continuous 500mATotal Device Diss
6.25. Size:175K semtech
bc807-16 bc807-25 bc807-40 bc808-16 bc808-25 bc808-40.pdf 

BC807 / BC808-AH PNP Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier applications These transistors are subdivided into three groups -16, -25 and -40, according to their current gain. As complementary types the NPN transistors BC817 and BC818 are recommended. TO-236 Plastic Package Features AEC-Q101 Qualified and PPAP Capable Halogen and A
6.26. Size:257K lrc
lbc807-16lt1g.pdf 

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFEATURELBC807-16LT1G Collector current capability IC = -500 mA.LBC807-25LT1G Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification.LBC807-40LT1G PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.3 S- Prefix for Au
6.27. Size:77K lrc
lbc807-16wt1g.pdf 

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFEATURE Collector current capability IC = -500 mA. LBC807-16WT1G Collector-emitter voltage VCEO(max) = -45 V. S-LBC807-16WT1G General purpose switching and amplification. PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.3 S- Prefix for Automotive and Other
6.28. Size:138K lrc
lbc807-16lt1g lbc807-25lt1g lbc807-40lt1g.pdf 

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconLBC807-16LT1GFEATURELBC807-25LT1GLBC807-40LT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification.3 PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.12DEVICE MARKIN
6.29. Size:184K lrc
lbc807-16lt1g lbc807-16lt3g lbc807-25lt1g lbc807-25lt3g lbc807-40lt1g lbc807-40lt3g.pdf 

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconLBC807-16LT1GFEATURE Collector current capability IC = -500 mA. LBC807-25LT1G Collector-emitter voltage VCEO(max) = -45 V.LBC807-40LT1G General purpose switching and amplification.S-LBC807-16LT1G PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.S-LBC8
6.30. Size:173K lrc
lbc807-16dmt1g.pdf 

LESHAN RADIO COMPANY, LTD.LBC807-16DMT1GLBC807-25DMT1GDual General Purpose TransistorsLBC807-40DMTPNP DualsS-LBC807-16DMT1G We declare that the material of product compliance with RoHS requirements.S-LBC807-25DMT1G S- Prefix for Automotive and Other Applications Requiring Unique SiteDMT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LBC807-4
6.31. Size:513K panjit
bc807-16w-au bc807-25w-au bc807-40w-au.pdf 

PBC807-16W-AU / BC807-25W-AU / BC807-40W-AU Silicon PNP General Purpose Transistors SOT-323 Unit: inch(mm) Voltage -45V Current -500mA Features Silicon PNP Epitaxial type Excellent DC current gain characteristics General purpose amplifier application AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 6124
6.32. Size:136K panjit
bc807-16 bc807-25 bc807-40.pdf 

BC80716~BC80740PNP GENERAL PURPOSE TRANSISTORS45 Volt POWER 330 mWattVOLTAGEFEATURES0.120(3.04) General purpose amplifier applications0.110(2.80) PNP epitaxial silicon, planar design Collector current IC = 500mA Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive)0.056(1.40) Green molding compound as per IEC61249 Std. .0.047
6.33. Size:569K kodenshi
kbc807-16 kbc807-25 kbc807-40c.pdf 

KBC807 16/25/40C P N P S i l i c o n T r a n s i s t o r 2018.08.06 2018.08.06 2018.08.06 2018.08.06 1 000 2017.07.22 2 001 2018.01.12 3 BV 002 2018.08.
6.34. Size:1483K slkor
bc807-16 bc807-25 bc807-40.pdf 

BC807PNP Silicon Epitaxial Planar TransistorsSOT-23 FEATURE Ldeally suited for automatic insertion Epitaxial planar die construction 1. BASE Complementary NPN type available(BC817) 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V V Emitter-Base
6.35. Size:432K umw-ic
bc807-16 bc807-25 bc807-40.pdf 

RUMW UMW BC807SOT-23 Plastic-Encapsulate Transistors BC807 TRANSISTOR (PNP) SOT-23 FEATURE Ldeally suited for automatic insertion Epitaxial planar die construction 1. BASE Complementary NPN type available(BC817) 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-
6.36. Size:342K agertech
bc807-16 bc807-25 bc807-40 bc808-16 bc808-25 bc808-40.pdf 

BC807/BC808-16/-25/-40PNP TransistorFeaturesSOT-23 For switching, AF driver and amplifier applications These transistors are subdivided into three groups-16, -25 and -40, according to their current gain. Ascomplementary types the NPN transistors BC817 andBC818 are recommended1 Base 2. Emitter 3. CollectorAbsolute Maximum Ratings (T =25, unless otherwisenoted)APa
6.37. Size:1006K anbon
bc807-16 bc807-25 bc807-40.pdf 

SOT-23 PNP Plastic-Encapsulate Transistors AS-3140050SOT-23 PNP Plastic-Encapsulate Transistors AS-3140050SOT-23 PNP Plastic-Encapsulate Transistors AS-3140050
6.40. Size:2081K high diode
bc807-16 bc807-25 bc807-40.pdf 

BC807SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP )FeaturesSOT- 23 High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC817 (NPN) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V V Collector-Emitter Voltage -45 V CEOCV Emitter-Base Voltage -5 V EBOI Collector Current C-
6.41. Size:6068K msksemi
bc807-16 bc807-25 bc807-40.pdf 

www.msksemi.comBC807-16/-25/-40Semiconductor CompianceSemiconductor CompianceSOT-23 FEATURE Ldeally suited for automatic insertion Epitaxial planar die construction 1. BASE Complementary NPN type available(BC817) 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-E
6.42. Size:796K cn shandong jingdao microelectronics
bc807-16 bc807-25 bc807-40.pdf 

Jingdao Microelectronics co.LTD BC807 BC807SOT-23PNP TRANSISTOR3FEATURES Ldeally suited for automatic insertion Epitaxial planar die construction Complementary NPN type available(BC817)1MAXIMUM RATINGS (Ta=25 unless otherwise noted)2Parameter Symbol Value Unit1.BASECollectorBase Voltage VCBO -50
6.43. Size:1695K cn yongyutai
bc807-16 bc807-25 bc807-40.pdf 

BC807 SeriesTRANSISTOR (PNP)MARKING: Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: Ldeally suited for automatic insertion Epitaxial planar die construction Complementary NPN type available(BC817)MAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage VCBO -50 VCollector-Emitter Voltage VCEO -45 VEmi
6.44. Size:995K cn zre
bc807-16 bc807-25 bc807-40.pdf 

BC807 TRANSISTOR(PNP) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features BC817 ; Complementary to BC817 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Package
6.45. Size:2206K cn twgmc
bc807-16 bc807-25 bc807-40.pdf 

BC807BC807BC807BC807BC8 0 7 TRANSISTOR(PNP)FEATURESSOT-23 Ideally Suited for Automatic InsertionEpitaxial Planar Die Construction1BASE 2EMITTER For Switching, AF Driver and Amplifier3COLLECTOR ApplicationsMARKING:BC807-16:5AComplementary NPN Types Available (BC817)BC807-25:5BBC807-40:5CMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Para
6.46. Size:273K cn yangzhou yangjie elec
bc807-16w bc807-25w bc807-40w.pdf 

RoHS COMPLIANT BC807-16W THRU BC807-40W PNP General Purpose Amplifier Features Capable of 0.2Watts(TA=25) of Power Dissipation Collector-current -0.5A Collector-base Voltage -50VEpoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Device Marking: BC807-16W 5A BC807-2
6.47. Size:322K cn yangzhou yangjie elec
bc807-16 bc807-25 bc807-40.pdf 

RoHS COMPLIANT BC807-16 THRU BC807-40 PNP General Purpose Amplifier Features Capable of 0.3Watts(TA=25) of Power Dissipation Collector current -0.5A Collector-base Voltage -50VEpoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Device Marking: BC807-16 5A BC807-25 5
6.48. Size:695K cn hottech
bc807-16 bc807-25 bc807-40.pdf 

BC807BIPOLAR TRANSISTOR (PNP)FEATURES Complementary to BC817 High Collector Current Epitaxial planar die construction High current gain Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwis
6.49. Size:783K cn xch
bc807-16 bc807-25 bc807-40.pdf 

BC807-16 BC807-25 BC807-40 FeaturesLdeally suited for automatic insertion epitaxial planar die construction complementary NPN type available(BC817) MARKING: 807-16:5A; 807-25:5B; 807-40:5C SOT-23 ADim Min MaxC0.37 0.51 AB C B1.20 1.40 C2.30 2.50TOP VIEWB ED0.89 1.03DEGE0.45 0.60G1.78 2.05MAX
Другие транзисторы... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
History: S8550E
| HUN5213