MMBTA06Q
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBTA06Q
Código: 1GM
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3
W
Tensión colector-base (Vcb): 80
V
Tensión colector-emisor (Vce): 80
V
Tensión emisor-base (Veb): 4
V
Corriente del colector DC máxima (Ic): 0.5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100
MHz
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta:
SOT23
- Selección de transistores por parámetros
MMBTA06Q
Datasheet (PDF)
..1. Size:249K cn yangzhou yangjie elec
mmbta06q.pdf 

RoHS RoHSCOMPLIANT COMPLIANTMMBTA06Q NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 High Conductance Part no. with suffix Q means AEC-Q101 qualified Applications NPN General Purpose Amplifier Mechanical Data Case: SOT-23 Terminals: Tin plated leads, solde
7.1. Size:82K motorola
mmbta05l mmbta06.pdf 

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBTA05LT1/DMMBTA05LT1Driver TransistorsMMBTA06LT1*NPN SiliconCOLLECTOR*Motorola Preferred Device31BASE32EMITTER1MAXIMUM RATINGS2Rating Symbol MMBTA05 MMBTA06 UnitCollectorEmitter Voltage VCEO 60 80 VdcCASE 31808, STYLE 6SOT23 (TO236AB)CollectorBase Voltage VCBO 60 80 VdcEmit
7.2. Size:203K fairchild semi
mpsa06 mmbta06 pzta06.pdf 

March 2011MPSA06 / MMBTA06 / PZTA06NPN General Purpose AmplifierFeatures This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from Process 33.MPSA06 MMBTA06 PZTA06CCEECBTO-92 SOT-23 SOT-223BMark:1GEBCAbsolute Maximum Ratings * Ta = 25C unless otherwise noted Symbol Parameter Value UnitsVCEO Colle
7.3. Size:891K fairchild semi
mmbta06.pdf 

MPSA06 MMBTA06 PZTA06CCEECBC TO-92BSOT-23BSOT-223EMark: 1GNPN General Purpose AmplifierThis device is designed for general purpose amplifier applicationsat collector currents to 300 mA. Sourced from Process 33.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 80 VVCBO Collector-Base Volta
7.4. Size:250K diodes
mmbta05 mmbta06.pdf 

MMBTA05 / MMBTA06NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Ideal for Low Power Amplification and Switching Case Material: Molded Plastic, Green Molding Compound UL Flammability Classification Rating 94V-0 Complementary PNP Type: MMBTA55 & MMBTA56 Totally Lead-Free & Fully RoHS compliant
7.5. Size:529K infineon
smbta06 mmbta06.pdf 

SMBTA06/MMBTA06NPN Silicon AF Transistor Low collector-emitter saturation voltage23 Complementary type: 1 SMBTA 56 / MMBTA56 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageSMBTA06/MMBTA06 s1G SOT231=B 2=E 3=CMaximum RatingsParameter Symbol Value Unit80 VCollector-emitter voltage VCEO80Colle
7.6. Size:763K mcc
mmbta05 mmbta06.pdf 

M C CMMBTA05TMMicro Commercial ComponentsMicro Commercial Components THRU20736 Marilla Street ChatsworthCA 91311MMBTA06Phone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF" Epitaxial Planar Die Construction NPN Small Signal Complementary PNP Types Available (MMBTA55/MMBTA56)General Purpose Ideal
7.8. Size:133K onsemi
mmbta06wt1.pdf 

MMBTA06WT1GDriver TransistorNPN SiliconMoisture Sensitivity Level: 1ESD Rating: Human Body Model -- 4 kVESD Rating: Machine Model -- 400 Vhttp://onsemi.comFeaturesCOLLECTOR3 These Devices are Pb--Free, Halogen Free/BFR Free and are RoHSCompliant1BASE2MAXIMUM RATINGSEMITTERRating Symbol Value Unit3Collector -- Emitter Voltage VCEO 80 VdcCollector -- Bas
7.9. Size:98K onsemi
mmbta05l mmbta06l.pdf 

MMBTA05L, MMBTA06LDriver TransistorsNPN SiliconFeatures S and NSV Prefix for Automotive and Other Applications Requiringwww.onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapableCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector
7.10. Size:103K onsemi
mmbta05lt1 mmbta06lt1.pdf 

MMBTA05LT1G,MMBTA06LT1GDriver TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant 31MAXIMUM RATINGSBASERating Symbol Value Unit2Collector-Emitter Voltage VCEO VdcEMITTERMMBTA05LT1 60MMBTA06LT1 803Collector-Base Voltage VCBO VdcMMBTA05LT1 601MMBTA06LT1 802Emitter-Base Vo
7.11. Size:114K onsemi
mmbta06lt3g.pdf 

MMBTA05L, MMBTA06L,SMMBTA06LDriver TransistorsNPN Siliconhttp://onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASE2EMITTERMAXIMUM RATINGSRating Symbol Value Unit3
7.12. Size:193K onsemi
mmbta06w smmbta06w.pdf 

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
7.13. Size:398K onsemi
mpsa06 mmbta06 pzta06.pdf 

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
7.14. Size:111K onsemi
mmbta06wt1g.pdf 

MMBTA06WT1G,SMMBTA06WT1G,Driver TransistorNPN SiliconMoisture Sensitivity Level: 1http://onsemi.comESD Rating: Human Body Model - 4 kVESD Rating: Machine Model - 400 VFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSC-70Site and Control Change RequirementsCASE 419 These Devices are Pb-Free, Halogen
7.15. Size:114K onsemi
mmbta06lt1g.pdf 

MMBTA05L, MMBTA06L,SMMBTA06LDriver TransistorsNPN Siliconhttp://onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASE2EMITTERMAXIMUM RATINGSRating Symbol Value Unit3
7.16. Size:212K utc
mmbta06.pdf 

UNISONIC TECHNOLOGIES CO., LTD MMBTA06 NPN SILICON TRANSISTOR AMPLIFIER TRANSISTOR FEATURES 3* Collector-Emitter Voltage: VCEO=80V * Collector Dissipation: PD=350mW 12SOT-23(JEDEC TO-236) ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3MMBTA06G-AE3-R SOT-23 E B C Tape Reel Note: Pin Assignment: E: Emitter B: Base C: Collector
7.17. Size:460K secos
mmbta06.pdf 

MMBTA06 0.5A , 80V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-23 High Voltage Application A Telephone Application L Complementary to MMBTA56 33Top ViewC B11 2MARKING 2K E1GM DH JF GPACKAGE INFORMATION Package MPQ Leader Size Mi
7.18. Size:950K jiangsu
mmbta06.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR (NPN) SOT23 FEATURES For Switching and Amplifier Applications Complementary Type PNP Transistor MMBTA56 MARKING: 1GM 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Volta
7.19. Size:84K kec
mmbta06.pdf 

SEMICONDUCTOR MMBTA06TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORDRIVER STAGE AMPLIFIER APPLICATIONS.VOLTAGE AMPLIFIER APPLICATIONS.EL B LFEATUREDIM MILLIMETERS_+A 2.93 0.20Complementary to MMBTA56.B 1.30+0.20/-0.15C 1.30 MAXSuffix U : Qualified to AEC-Q101.23 D 0.40+0.15/-0.05ex) MMBTA06-RTK/HUE 2.40+0.30/-0.20G 1.901H 0.95J 0.13+0.10/-0.05K
7.20. Size:2194K htsemi
mmbta06.pdf 

MMBTA06TRANSISTOR(NPN)FEATURES For Switching and Amplifier Applications Complementary Type PNP Transistor MMBTA56 MARKING: 1GM MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit SOT23 V Collector-Base Voltage 80 V CBOV Collector-Emitter Voltage 80 V CEOV Emitter-Base Voltage 4 V EBOI Collector Current 500 mA CP Collector P
7.21. Size:269K gsme
mmbta06.pdf 

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GMA06MAXIMUM RATINGS (Ta=25 )MAXIMUM RATINGS (Ta=25)MAXIMUM RATINGS (Ta=25 )Characteristic Symbol Rating Unit Collector-Base voltageVCBO 80 Vdc
7.22. Size:161K lge
mmbta05 mmbta06.pdf 

MMBTA05/MMBTA06 NPN General Purpose TransistorSOT-23Features Epitaxial planar die construction. Complementary PNP type available (MMBTA55/MMBTA56). Also available in lead free version. ApplicationsDimensions in inches and (millimeters) Ideal for medium power amplification and switching Ordering Information Type No. Marking Package Code MMBTA05 1H SOT-23 M
7.23. Size:1274K blue-rocket-elect
mmbta06.pdf 

MMBTA06 Rev.FApr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features MMBTA56 Complementary to MMBTA56. / Applications Ideal for medium power amplification and switching. / Equivalent Circuit
7.24. Size:106K first silicon
mmbta06lt1g.pdf 

SEMICONDUCTORMMBTA05/06TECHNICAL DATADriver TransistorsFEATURESWe declare that the material of product3compliance with RoHS requirements.2MAXIMUM RATINGS1ValueRating Symbol MMBTA05 MMBTA06 UnitSOT23CollectorEmitter Voltage V 60 80 VdcCEOCollectorBase Voltage V 60 80 VdcCBOEmitterBase Voltage V 4.0 VdcEBOCollector Current Continuous I
7.25. Size:109K first silicon
mmbta06.pdf 

SEMICONDUCTORMMBTA05/06TECHNICAL DATADriver TransistorsFEATURESWe declare that the material of productcompliance with RoHS requirements.DEVICE MARKINGMMB = 1H , MMBTA06 = 1GMTA0532MAXIMUM RATINGS1ValueRating Symbol MMBTA05 MMBTA06 UnitSOT23CollectorEmitter Voltage V 60 80 VdcCEOCollectorBase Voltage V 60 80 VdcCBOEmitterBase Voltage V 4
7.26. Size:1118K kexin
mmbta06.pdf 

SMD Type TransistorsNPN TransistorsMMBTA06 (KMBTA06)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features For Switching and Amplifier Applications Complementary to MMBTA561 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Col
7.27. Size:394K panjit
mmbta05-au mmbta06-au mmbta55-au mmbta56-au.pdf 

PMMBTA05-AU / MMBTA06-AU / MMBTA55-AU / MMBTA56-AU NPN AND PNP HIGH VOLTAGE TRANSISTOR SOT-23 Unit: inch(mm) 60~80V 225mW Voltage Power Features NPN and PNP silicon, planar design Collector current IC = 500mA AEC-Q101 qualified Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive) Green molding compound as per IEC61249 Std.. (
7.28. Size:273K panjit
mmbta06w.pdf 

PMMBTA06W NPN High Voltage Transistor 80V 225mW Voltage Power Features NPN silicon, planar design Collector current IC = 500mA Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data Case: SOT-323 Package Terminals: Solderable per MIL-STD-750, Method 2026 Appr
7.29. Size:483K panjit
mmbta05 mmbta06 mmbta55 mmbta56.pdf 

PMMBTA05 / MMBTA06 / MMBTA55 / MMBTA56 NPN AND PNP HIGH VOLTAGE TRANSISTOR SOT-23 Unit: inch(mm) 60~80V 225mW Voltage Power Features NPN and PNP silicon, planar design Collector current IC = 500mA Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard Mechanical Data Case: SOT-23 Package Terminals: Solderable
7.30. Size:465K tiptek
mmbta05w mmbta06w.pdf 

MMBTA05W/MMBTA06W GENERAL PURPOSE TRANSISTORS NPN Silicon FEATURES NPN SILICON EPITAXIAL PLANAR TRANSISTOR FORSWITCHING AND AMPLIFIER APPLICATIONS COLLECTOR CURRENT IC = 500 mA PB FREE PRODUCT ARE AVAILABLE :98.5% SN ABOVE CAN MEET ROHSENVIRONMENT SUBSTANCE DIRECTIVE REQUEST MECHANICAL DATA CASESOT-323 TERMINALSSOLDERABLE PER MIL-STD-202G, MET
7.31. Size:678K umw-ic
mmbta06.pdf 

RUMW UMW MMBTA06SOT-23 Plastic-Encapsulate TransistorsMMBTA06 TRANSISTOR (NPN) SOT-23 FEATURES For Switching and Amplifier Applications 1. BASE Complementary Type PNP Transistor MMBTA56 2. EMITTER MARKING: 1GM 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 80 V CBOV Collector-Emitter V
7.32. Size:2575K fms
mmbta06.pdf 

SOT-23 Plastic-Encapsulate TransistorsFormosa MSMMBTA06 TRANSISTOR (NPN) FEATURES For Switching and Amplifier Applications Complementary Type PNP Transistor MMBTA56 SOT23 MARKING: 1GM MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 80 V CBO1. BASE V Collector-Emitter Voltage 80 V CEO2. EMITTER V Em
7.35. Size:993K cn zre
mmbta06.pdf 

MMBTA06 TRANSISTOR(NPN) SOT-23 SOT-23 Plastic-Encapsulate Transistors SOT-23 Features For Switching and Amplifier Applications MMBTA56 ; Complementary to MMBTA56 300mW; Power Dissipation of 300mW High Stability and High Reliability Me
7.36. Size:290K cn yangzhou yangjie elec
mmbta05 mmbta06.pdf 

RoHS RoHSCOMPLIANT COMPLIANTMMBTA05 THRU MMBTA06 NPN General Purpose Amplifier transistors Features Epoxy meets UL-94 V-0 flammability ratingHalogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package: SOT-23 Moldi
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